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IS62WV102416EALL の電気的特性と機能

IS62WV102416EALLのメーカーはISSIです、この部品の機能は「ULTRA LOW POWER CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS62WV102416EALL
部品説明 ULTRA LOW POWER CMOS STATIC RAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS62WV102416EALL Datasheet, IS62WV102416EALL PDF,ピン配置, 機能
IS62/65WV102416EALL
IS62/65WV102416EBLL
1Mx16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
JANUARY 2015
KEY FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation
30 mW (typical) operating
12 µW (typical) CMOS standby
TTL compatible interface levels
Single power supply
1.65V1.98V Vdd (62/65WV102416EALL)
2.2V--3.6V Vdd (62/65WV102416EBLL)
Data control for upper and lower bytes
Industrial and Automotive temperature support
BLOCK DIAGRAM
DESCRIPTION
The IS62WV102416EALL/BLL and
IS65WV102416EALL/BLL are Low Power, 16M bit
static RAMs organized as 1024K words by 16bits. It is
fabricated using 's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When is HIGH (deselected) or when CS2 is low
(deselected) or when is low , CS2 is high and both
and are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs. The active LOW
Write Enable
controls both writing and reading of
the memory. A data byte allows Upper Byte
and
Lower Byte ( access.
The IS62WV102416EALL/BLL and
IS65WV102416EALL/BLL are packaged in the JEDEC
standard 48-pin BGA (6mm x 8mm).
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
1

1 Page





IS62WV102416EALL pdf, ピン配列
IS62/65WV102416EALL
IS62/65WV102416EBLL
FUNCTION DESCRIPTION
SRAM is one of random access memories. Each byte or word has an address and can be accessed randomly. SRAM
has three different modes supported. Each function is described below with Truth Table.
STANDBY MODE
Device enters standby mode when deselected ( HIGH or CS2 LOW or both and are HIGH). The input and
output pins (I/O0-15) are placed in a high impedance state. The current consumption in this mode will be either ISB1 or
ISB2 depending on the input level. CMOS input in this mode will maximize saving power.
WRITE MODE
Write operation issues with Chip selected ( LOW and CS2 HIGH) and Write Enable ( ) input LOW. The input and
output pins(I/O0-15) are in data input mode. Output buffers are closed during this time even if is LOW. and
enables a byte write feature. By enabling LOW, data from I/O pins (I/O0 through I/O7) are written into the location
specified on the address pins. And with being LOW, data from I/O pins (I/O8 through I/O15) are written into the
location.
READ MODE
Read operation issues with Chip selected ( LOW and CS2 HIGH) and Write Enable ( ) input HIGH. When is
LOW, output buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. and
enables a byte read feature. By enabling LOW, data from memory appears on I/O0-7. And with being LOW,
data from memory appears on I/O8-15.
In the READ mode, output buffers can be turned off by pulling HIGH. In this mode, internal device operates as
READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used.
TRUTH TABLE
Mode
CS2
I/O0-I/O7 I/O8-I/O15 VDD Current
H X X X X X High-Z High-Z
Not Selected
X
L
X
X
X
X
High-Z
High-Z
ISB1,ISB2
X X X X H H High-Z High-Z
Output Disabled
L
L
H
H
H
H
H
H
L
X
X
L
High-Z
High-Z
High-Z
High-Z
ICC
L H H L L H DOUT High-Z
Read
L H H L H L High-Z DOUT
ICC
L H H L L L DOUT DOUT
L H L X L H DIN High-Z
Write
L H L X H L High-Z
DIN
ICC
LHLXL L
DIN
DIN
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
3


3Pages


IS62WV102416EALL 電子部品, 半導体
IS62/65WV102416EALL
IS62/65WV102416EBLL
IS62(5)WV102416EALL DC ELECTRICAL CHARACTERISTICS-II FOR POWER
(OVER THE OPERATING RANGE)
Symbol Parameter
Test Conditions
Grade
Typ. Max.
ICC VDD Dynamic
Operating
VDD=VDD(max), IOUT=0mA, f=fMAX
Com.
Ind.
6 12
- 12
Supply Current
Auto.
- 12
ICC1 VDD Static
Operating
VDD=VDD(max), IOUT = 0mA, f=0Hz
Com.
Ind.
36
-6
Supply Current
Auto.
-6
ISB1
Note:
CMOS Standby
Current (CMOS
Inputs)
VDD=VDD(max),
(1) 0V ≤ CS2 ≤ 0.2V
or
(2) VDD - 0.2V, CS2 ≥ VDD - 0.2V
or
(3) and ≥ VDD- 0.2V
0.2V, CS2 VDD - 0.2V
Com.
Ind.
Auto.
30 50
- 65
- 165
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VDD = VDD(typ), TA = 25C
Unit
mA
mA
µA
µA
µA
IS62(5)WV102416EBLL DC ELECTRICAL CHARACTERISTICS-II FOR POWER
(OVER THE OPERATING RANGE)
Symbol Parameter
Test Conditions
Grade
Typ. Max.
ICC VDD Dynamic
Operating
VDD=VDD(max), IOUT=0mA, f=fMAX
Com.
Ind.
6 12
- 12
Supply Current
Auto.
- 12
ICC1 VDD Static
Operating
VDD=VDD(max), IOUT = 0mA, f=0Hz
Com.
Ind.
36
-6
Supply Current
Auto.
-6
ISB1
CMOS Standby
Current (CMOS
Inputs)
VDD=VDD(max),
(1) 0V ≤ CS2 ≤ 0.2V
or
Com.
Ind.
30 50
- 65
(2) VDD - 0.2V, CS2 ≥ VDD - 0.2V
Auto.
- 165
or
(3) and ≥ VDD- 0.2V
0.2V, CS2 VDD - 0.2V
Note:
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VDD = VDD(typ), TA = 25
Unit
mA
mA
µA
µA
µA
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
6

6 Page



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部品番号部品説明メーカ
IS62WV102416EALL

ULTRA LOW POWER CMOS STATIC RAM

ISSI
ISSI


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