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IS61WV10248ALL の電気的特性と機能

IS61WV10248ALLのメーカーはISSIです、この部品の機能は「1M x 8 HIGH-SPEED CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS61WV10248ALL
部品説明 1M x 8 HIGH-SPEED CMOS STATIC RAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS61WV10248ALL Datasheet, IS61WV10248ALL PDF,ピン配置, 機能
IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
1M x 8 HIGH-SPEED CMOS STATIC RAM
JUNE 2008
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
– VDD 1.65V to 2.2V (IS61WV10248ALL)
speed = 20ns for Vcc = 1.65V to 2.2V
– VDD 2.4V to 3.6V (IS61/64WV10248BLL)
speed = 10ns for Vcc = 2.4V to 3.6V
speed = 8ns for Vcc = 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61WV10248ALL/BLL and IS64WV10248BLL
are very high-speed, low power, 1M-word by 8-bit CMOS
static RAM. The IS61WV10248ALL/BLL and
IS64WV10248BLL are fabricated using ISSI's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV10248ALL/BLL and IS64WV10248BLL
operate from a single power supply and all inputs are
TTL-compatible.
The IS61WV10248ALL/BLL and IS64WV10248BLL are
available in 48 ball mini BGA and 44-pin TSOP (Type II)
packages.
A0-A19
VDD
GND
I/O0-I/O7
DECODER
1M X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/08
1

1 Page





IS61WV10248ALL pdf, ピン配列
IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down)
Output Disabled H
Read
H
Write
L
CE OE
HX
LH
LL
LX
I/O Operation VDD Current
High-Z
ISB1, ISB2
High-Z
DOUT
DIN
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
VDD VDD Relates to GND
–0.3 to 4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT Power Dissipation
1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN Input Capacitance
VIN = 0V
6 pF
CI/O
Input/Output Capacitance
VOUT = 0V
8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/08
3


3Pages


IS61WV10248ALL 電子部品, 半導体
IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
AC TEST CONDITIONS (HIGH SPEED)
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level (VRef)
Output Load
Unit
(2.4V-3.6V)
0.4V to VDD-0.3V
1.5ns
VDD/2
See Figures 1 and 2
AC TEST LOADS
OUTPUT
ZO = 50Ω
50Ω
1.5V
30 pF
Including
jig and
scope
Figure 1.
Unit
(3.3V + 5%)
0.4V to VDD-0.3V
1.5ns
VDD/2 + 0.05
See Figures 1 and 2
Unit
(1.65V-2.2V)
0.4V to VDD-0.2V
1.5ns
VDD/2
See Figures 1 and 2
3.3V
319 Ω
OUTPUT
5 pF
Including
jig and
scope
Figure 2.
353 Ω
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/08

6 Page



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部品番号部品説明メーカ
IS61WV10248ALL

1M x 8 HIGH-SPEED CMOS STATIC RAM

ISSI
ISSI


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