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IS61WV10248EDBLL の電気的特性と機能

IS61WV10248EDBLLのメーカーはISSIです、この部品の機能は「1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS61WV10248EDBLL
部品説明 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS61WV10248EDBLL Datasheet, IS61WV10248EDBLL PDF,ピン配置, 機能
IS61WV10248EDBLL
IS64WV10248EDBLL
1M x 8 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH ECC
FEBRUARY 2013
FEATURES
• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with CE and OE options
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Packages available:
48-ball miniBGA (6mm x 8mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
DESCRIPTION
The ISSI IS61/64WV10248EDBLL are very high-speed,
low power, 1M-word by 8-bit CMOS static RAM. The
IS61/64WV10248EDBLL are fabricated using ISSI's
high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61/64WV10248EDBLL operate from a single
power supply and all inputs are TTL-compatible.
The IS61/64WV10248EDBLL are available in 48 ball
mini BGA (6mm x 8mm) and 44-pin TSOP (Type II)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
Decoder
Memory Array
(1024Kx8)
ECC Array
(1024Kx4)
IO0-7
8
I/O Data
Circuit
8
12
ECC
84
Column I/O
/CE
/OE
/WE
Control
Circuit
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. A
02/20/2013

1 Page





IS61WV10248EDBLL pdf, ピン配列
IS61WV10248EDBLL
IS64WV10248EDBLL
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down)
Output Disabled H
Read
H
Write
L
CE OE I/O Operation Vdd Current
H X
High-Z
Isb1, Isb2
L H
L L
L X
High-Z
Dout
Din
Icc
Icc
Icc
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd
Vdd Relates to GND
–0.3 to 4.0
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions Max. Unit
Cin
Input Capacitance
Vin = 0V
6 pF
CI/O
Input/Output Capacitance
Vout = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
pF
Integrated Silicon Solution, Inc. — www.issi.com 3
Rev. A
02/20/2013


3Pages


IS61WV10248EDBLL 電子部品, 半導体
IS61WV10248EDBLL
IS64WV10248EDBLL
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8
Symbol Parameter
Test Conditions Min. Max.
Icc Vdd Dynamic Operating Vdd = Max.,
Com. — 45
Supply Current
Iout = 0 mA, f = fmax Ind. — 55
Auto. — —
typ.(2)
Icc1
Operating
Supply Current
Vdd = Max.,
Iout = 0 mA, f = 0
Com.
Ind.
Auto.
20
25
Isb1 TTL Standby Current
(TTL Inputs)
Vdd = Max.,
Vin = Vih or Vil
CE Vih, f = 0
Com.
Ind.
Auto.
20
25
Isb2
CMOS Standby
Current (CMOS Inputs)
Vdd = Max.,
CE Vdd – 0.2V,
Vin Vdd – 0.2V, or
Vin 0.2V, f = 0
Com. — 10
Ind. — 15
Auto. — —
typ.(2)
-10
Min. Max.
— 40
— 50
— 65
15
— 20
— 25
— 50
— 20
— 25
— 45
— 10
— 15
— 35
2
-20
Min. Max.
— 30
— 40
— 55
Unit
mA
— 20
— 25
— 50
mA
— 20
— 25
— 45
mA
10 mA
— 15
— 35
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
02/20/2013

6 Page



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部品番号部品説明メーカ
IS61WV10248EDBLL

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

ISSI
ISSI


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