IS66WVC2M16ALL Datasheet PDF - ISSI
Part Number | IS66WVC2M16ALL | |
Description | 32Mb Async/Page/Burst CellularRAM | |
Manufacturers | ISSI | |
Logo | ||
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32Mb Async/Page/Burst CellularRAM 1.5
Overview
The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access
Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and
Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be
operated in a standard asynchronous mode and high performance burst mode. The die has separate power
rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
Single device supports asynchronous , page,
and burst operation
Mixed Mode supports asynchronous write and
synchronous read operation
Dual voltage rails for optional performance
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
Asynchronous mode read access : 70ns
Interpage Read access : 70ns
Intrapage Read access : 20ns
Burst mode for Read and Write operation
4, 8, 16,32 or Continuous
Low Power Consumption
Asynchronous Operation < 25 mA
Intrapage Read < 18mA
Burst operation < 35 mA (@104Mhz)
Standby < 150 uA(max.)
Deep power-down (DPD) < 3uA (Typ)
Low Power Feature
Reduced Array Refresh
Temperature Controlled Refresh
Deep power-down (DPD) mode
Operation Frequency up to 104Mhz
Operating temperature Range
Industrial -40°C~85°C
Package: 54-ball VFBGA
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev.A | June 2011
www.issi.com – [email protected]
1
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IS66WVC2M16ALL
Functional Description
All functions for the device are listed below in Table 2.
Table 2. Functional Descriptions
Mode
Power
Asynchronous Mode
CLK1
ADV#
CE#
OE#
WE#
CRE2
UB#/
LB#
WAIT3
DQ
[15:0]4
Note
Read
Active
L
L
LLH L
L
Low-Z
Data-out
5
Write
Active
L
L
LXL
L
L Low-Z Data-in
5
Standby
Stand
by
L
X
HX X
L
X High-Z High-Z
6,7
No Operation
Idle
L
X
LXX
L
X Low-Z
X
5,7
Configuration
Register Write
Active
L
L
LHL H
X Low-Z High-Z
Configuration
Register Read
Active
L
L
LLH H
L Low-Z Config-Reg
Out
Deep Power-
Down
DPD
L
X
HX X
X
X High-Z High-Z
10
Synchronous Mode (Burst Mode)
Async read
Active
L
L
LLH L
L Low-Z Data-Out 5
Async write Active
L
L
LXL
L
L
Low-Z
Data-In
5
Stand
Standby
by
L
X HXX L
X High-Z High-Z
6,7
No operation
Idle
L
X
LXX
L
X Low-Z
X
5,8
Initial
burst read
Initial
burst write
Burst
continue
Active
Active
Active
L
LXH
L
L Low-Z
X
5,8
L L H L L X Low-Z X 5,8
H
LXX
X
L
Low-Z
Data-In or
Data-Out
5,8
Burst suspend Active
X
X
LHX
X
X Low-Z High-Z 5,8
Configuration
register write
Active
L
LHL
H
X
Low-Z
High-Z
8,11
Configuration
register read
Active
L
LLH H
L
Low-Z
Config-Reg
Out
8,11
Deep Power-
Down
DPD
L
X
HX X
X
X High-Z High-Z
10
Rev.A | June 2011
www.issi.com – [email protected]
5
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Information | Total 30 Pages | |
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