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PDF IS66WV1M16EALL Data sheet ( Hoja de datos )
| Número de pieza | IS66WV1M16EALL | |
| Descripción | ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
| Fabricantes | ISSI | |
| Logotipo |  |
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IS66WV1M16EALL
IS66/67WV1M16EBLL
16Mb LOW VOLTAGE,
PRELIMINARY INFORMATION
OCTOBER 2014
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Features
High-Speed access time :
- 70ns ( IS66WV1M16EALL )
- 55ns (IS66/67WV1M16EBLL )
CMOS Lower Power Operation
Single Power Supply
VDD =1.7V~1.95V( IS66WV1M16EALL )
VDD =2.5V~3.6V (IS66/67WV1M16EBLL )
Three State Outputs
Data Control for Upper and Lower bytes
Lead-free Available
DESCRIPTION
The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are
high-speed,16M bit static RAMs organized as 1M words by
16 bits. It is fabricated using ISSI’s high performance CMOS
technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs. The active LOW Write Enable (WE#)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB#) and Lower Byte (LB#) access.
FUNCTIONAL BLOCK DIAGRAM
The IS66WV1M16 EALL and IS66/67WV1M16EBLL are
packaged in the JEDEC standard 48-ball mini BGA
(6mm x 8mm). The device is also available for die sales.
A0~A19
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
Address
Decode Logic
I/O DATA
CIRCUIT
COLUMN
I/O
1M X 16
DRAM
Memory Array
CS2
CS1#
OE#
WE#
UB#
LB#
Control
Logic
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assu
mes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specificatio
n before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected
to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution,
Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. 0A | October 2014
www.issi.com - [email protected]
1
1 page  
IS66WV1M16EALL
IS66/67WV1M16EBLL
CAPACITANCE
Symbol
Description
Conditions
MIN
CIN Input Capacitance
VIN = 0V
CIO Input/Output Capacitance (DQ) Vout = 0V
-
-
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
MAX
8
10
Unit
pF
pF
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall
Time
Input and Output
Timing and
Reference Level
Output Load
1.7V – 1.95V
( Unit )
0.4V to VDD – 0.2V
5ns
VREF
See Figures 1 and 2
Symbol
R1(Ω)
R2(Ω)
VREF
VTM
1.7V – 1.95V
3070
3150
0.9V
1.8V
2.5V – 3.6V
1029
1728
1.4V
2.8V
2.5V – 3.6V
( Unit )
0.4V to VDD – 0.3V
5ns
VREF
See Figures 1 and 2
AC TEST LOADS
R1
VTM
OUTPUT
30 pF
Including
Jig and
scope
Figure 1
Rev. 0A | October 2014
R1
VTM
OUTPUT
R2 5 pF
Including
Jig and
scope
Figure 2
www.issi.com - [email protected]
R2
5
5 Page 
IS66WV1M16EALL
IS66/67WV1M16EBLL
WRITE CYCLE NO. 3 (WE# Controlled, OE#= LOW during Write Cycle)
tWC
ADDRESS
OE#
LOW
CS1#
CS2
WE#
UB#,LB#
tSCS1
tSCS2
tAW
tPWE
tPWB
tHA
DOUT
tSA tHZWE
DATA UNDEFINED
HIGH-Z
tSD
tLZWE
tHD
DIN DATA-IN VALID
WRITE CYCLE NO. 4 (UB# / LB# Controlled, CS2 is HIGH during Write Cycle)
ADDRESS
CS1#
tWC
ADDRESS 1
tCSM
tSA
tWC
ADDRESS 2
WE#
UB#,LB#
DOUT
tHZWE
DATA UNDEFINED
DIN
tPWB
WORD 1
HIGH-Z
tSD
DATA IN
VALID
tHA
tSA
tHD
tPWB
WORD 2
tHA
tLZWE
DATA IN
VALID
Rev. 0A | October 2014
www.issi.com - [email protected]
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IS66WV1M16EALL.PDF ] | |
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