PDF IS66WV1M16DBLL Data sheet ( Hoja de datos )

Número de pieza	IS66WV1M16DBLL
Descripción	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Fabricantes	ISSI
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No Preview Available ! IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES DESCRIPTION • High-speed access time: – 70ns (IS66WV1M16DALL/DBLL) – 55ns (IS66WV1M16DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V - 1.95V (IS66WV1M16DALL) – Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. FUNCTIONAL BLOCK DIAGRAM The IS66WV1M16DALL/DBLL is packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm). The device is also available for die sales. A0-A19 DECODER 1M x 16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CS2 CS1 OE WE UB LB CONTROL CIRCUIT Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 02/04/2011 1 1 page IS66WV1M16DALL IS66WV1M16DBLL CAPACITANCE(1) Symbol Parameter Conditions Max. Cin Input Capacitance Vin = 0V 8 Cout Input/Output Capacitance Vout = 0V 10 Note: 1. Tested initially and after any design or process changes that may affect these parameters. Unit pF pF AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load 1.7V-1.95V (Unit) 0.4V to Vdd-0.2 5 ns Vref See Figures 1 and 2 2.5V-3.6V (Unit) 0.4V to Vdd-0.3V 5ns Vref See Figures 1 and 2 R1(Ω) R2(Ω) Vref Vtm 1.7V - 1.95V 3070 3150 0.9V 1.8V 2.5V - 3.6V 1029 1728 1.4V 2.8V AC TEST LOADS VTM R1 OUTPUT 30 pF Including jig and scope Figure 1 R2 Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 02/04/2011 VTM R1 OUTPUT 5 pF Including jig and scope Figure 2 R2 5 5 Page IS66WV1M16DALL IS66WV1M16DBLL WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle) ADDRESS tWC OE CS1 CS2 WE tSCS1 tSCS2 tAW t PWE tHA LB, UB DOUT DIN tSA tHZWE DATA UNDEFINED HIGH-Z tLZWE tSD tHD DATA-IN VALID WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) ADDRESS tWC OE CS1 CS2 WE tSCS1 tSCS2 tAW t PWE tHA LB, UB DOUT DIN tSA tHZWE DATA UNDEFINED HIGH-Z tLZWE tSD tHD DATA-IN VALID Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 02/04/2011 11 11 Page

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