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PDF IS66WV51216EALL Data sheet ( Hoja de datos )
| Número de pieza | IS66WV51216EALL | |
| Descripción | ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
| Fabricantes | ISSI | |
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IS66WV51216EALL
IS66/67WV51216EBLL
8Mb LOW VOLTAGE,
ADVANCED INFORMATION
NOVEMBER 2013
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
FEATUR ES
• High-speed access time:
– 70ns (IS66WV51216EALL, IS66/67WV51216EBLL)
– 55ns (IS66/67WV51216EBLL)
• CMOS low power operation
• Single power supply
– Vdd = 1.7V-1.95V (IS66WV51216EALL)
– Vdd = 2.5V-3.6V (IS66/67WV51216EBLL)
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS66WV51216EALL and IS66/67WV51216EBLL
are high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS66WV51216EALL and IS66/67WV51216EBLL are
packaged in the JEDEC standard 48-ball mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo
available for die sales.
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. 00A
11/22/2013
1 page  
IS66WV51216EALL
IS66/67WV51216EBLL
CAPACITANCE(1)
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
8
Cout
Input/Output Capacitance
Vout = 0V
10
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Unit
pF
pF
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
1.7V-1.95V
(Unit)
0.4V to Vdd-0.2
5 ns
Vref
See Figures 1 and 2
2.5V-3.6V
(Unit)
0.4V to Vdd-0.3V
5ns
Vref
See Figures 1 and 2
R1(Ω)
R2(Ω)
Vref
Vtm
1.7V - 1.95V
3070
3150
0.9V
1.8V
2.5V - 3.6V
1029
1728
1.4V
2.8V
AC TEST LOADS
VTM
R1
OUTPUT
30 pF
Including
jig and
scope
Figure 1
R2
VTM
R1
OUTPUT
5 pF
Including
jig and
scope
Figure 2
R2
Integrated Silicon Solution, Inc. — www.issi.com 5
Rev. 00A
11/22/2013
5 Page 
IS66WV51216EALL
IS66/67WV51216EBLL
WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
ADDRESS
tWC
OE
CS1
CS2
WE
tSCS1
tSCS2
tAW
t PWE
tHA
LB, UB
DOUT
DIN
tSA tHZWE
DATA UNDEFINED
HIGH-Z
tLZWE
tSD tHD
DATA-IN VALID
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
ADDRESS
tWC
OE
CS1
CS2
WE
tSCS1
tSCS2
tAW
t PWE
tHA
LB, UB
DOUT
DIN
tSA tHZWE
DATA UNDEFINED
HIGH-Z
tLZWE
tSD tHD
DATA-IN VALID
Integrated Silicon Solution, Inc. — www.issi.com 11
Rev. 00A
11/22/2013
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet IS66WV51216EALL.PDF ] | |
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