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PDF IS65WV6416DBLL Data sheet ( Hoja de datos )
| Número de pieza | IS65WV6416DBLL | |
| Descripción | ULTRA LOW POWER CMOS STATIC RAM | |
| Fabricantes | ISSI | |
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IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
OCTOBER 2009
FEATURES
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation:
15 mW (typical) operating
1.5 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V--2.2V Vdd (62WV6416DALL)
2.3V--3.6V Vdd (65WV6416DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and automotive temperature support
• 2CS Option Available
• Lead-free available
DESCRIPTION
The ISSI IS62/65WV6416DALL and IS62/65WV6416DBLL
are high-speed, 1M bit static RAMs organized as 64K words
by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or when CS1 is low, CS2 is high and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62/65WV6416DALL and IS62/65WV6416DBLL are
packaged in the JEDEC standard 48-pin mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CS2
CS1
OE
WE
UB
LB
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
64K x 16
MEMORY ARRAY
COLUMN I/O
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
1
1 page  
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 3.3V + 5%
Symbol Parameter
Test Conditions
Min.
Voh
Output HIGH Voltage
Vdd = Min., Ioh = –1 mA
2.4
Vol
Output LOW Voltage
Vdd = Min., Iol = 2.1 mA
—
Vih
Vil
Ili
Ilo
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Output Leakage
GND ≤ Vin ≤ Vdd
GND ≤ Vout ≤ Vdd, Outputs Disabled
2
–0.3
–1
–1
Note:
1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested.
Max.
—
0.4
Vdd + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 2.3V-3.6V
Symbol Parameter
Test Conditions
Min.
Voh
Output HIGH Voltage
Vdd = Min., Ioh = –1.0 mA
1.8
Vol
Output LOW Voltage
Vdd = Min., Iol = 2.1 mA
—
Vih
Input HIGH Voltage
2.0
Vil
Input LOW Voltage(1)
–0.3
Ili
Input Leakage
GND ≤ Vin ≤ Vdd
–1
Ilo
Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled
–1
Note:
1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested.
Max.
—
0.4
Vdd + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 1.65V-2.2V
Symbol Parameter
Test Conditions
Vdd
Min.
Voh
Output HIGH Voltage
Ioh = -0.1 mA
1.65-2.2V
1.4
Vol
Output LOW Voltage
Iol = 0.1 mA
1.65-2.2V
—
Vih
Input HIGH Voltage
1.65-2.2V
1.4
Vil(1)
Input LOW Voltage
1.65-2.2V
–0.2
Ili
Input Leakage
GND ≤ Vin ≤ Vdd
–1
Ilo
Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled
–1
Note:
1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested.
Max.
—
0.2
Vdd + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
5
5 Page 
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
WRITE CYCLE NO. 4 (UB/LB Controlled)
ADDRESS
t WC
ADDRESS 1
t WC
ADDRESS 2
OE
CS1 LOW
CS2 HIGH
t SA
WE
UB, LB
DOUT
DIN
t PBW
t HZWE
DATA UNDEFINED
WORD 1
HIGH-Z
t SD
DATAIN
VALID
t HA
t SA
t PBW
WORD 2
t HA
t LZWE
t HD
t SD
DATAIN
VALID
t HD
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IS65WV6416DBLL.PDF ] | |
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