DataSheet.jp

IS65WV6416DALL の電気的特性と機能

IS65WV6416DALLのメーカーはISSIです、この部品の機能は「ULTRA LOW POWER CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS65WV6416DALL
部品説明 ULTRA LOW POWER CMOS STATIC RAM
メーカ ISSI
ロゴ ISSI ロゴ 




このページの下部にプレビューとIS65WV6416DALLダウンロード(pdfファイル)リンクがあります。
Total 15 pages

No Preview Available !

IS65WV6416DALL Datasheet, IS65WV6416DALL PDF,ピン配置, 機能
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
OCTOBER 2009
FEATURES
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation:
15 mW (typical) operating
1.5 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V--2.2V Vdd (62WV6416DALL)
2.3V--3.6V Vdd (65WV6416DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and automotive temperature support
• 2CS Option Available
• Lead-free available
DESCRIPTION
The ISSI IS62/65WV6416DALL and IS62/65WV6416DBLL
are high-speed, 1M bit static RAMs organized as 64K words
by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or when CS1 is low, CS2 is high and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62/65WV6416DALL and IS62/65WV6416DBLL are
packaged in the JEDEC standard 48-pin mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CS2
CS1
OE
WE
UB
LB
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
64K x 16
MEMORY ARRAY
COLUMN I/O
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
09/29/09
1

1 Page





IS65WV6416DALL pdf, ピン配列
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
TRUTH TABLE
Mode
WE CS1 CS2 OE LB UB
I/O PIN
I/O0-I/O7 I/O8-I/O15 Vdd Current
Not Selected
X H X X X X
X X L X X X
X X X X H H
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Isb1, Isb2
Isb1, Isb2
Isb1, Isb2
Output Disabled
H L H H L X
H L H H X L
High-Z
High-Z
High-Z
High-Z
Icc
Icc
Read
H L H L L H
Dout
High-Z Icc
H L H L H L
High-Z
Dout
H L H L L L Dout Dout
Write
L L H X L H
Din High-Z Icc
L L H X H L
High-Z
Din
L L H X L L Din Din
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd
Vdd Relates to GND
–0.3 to 4.0
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
6
CI/O
Input/Output Capacitance
Vout = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
Unit
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
09/29/09
3


3Pages


IS65WV6416DALL 電子部品, 半導体
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
OPERATING RANGE (Vdd)
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Automotive –40°C to +125°C
Vdd
1.65V-2.2V
1.65V-2.2V
1.65V-2.2V
Speed
45ns
55ns
55ns
OPERATING RANGE (Vdd)
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Vdd (45 ns)
2.3V-3.6V
2.3V-3.6V
Vdd (35 ns)
3.3V+5%
3.3V+5%
OPERATING RANGE (Vdd)
Range
Ambient Temperature
Automotive –40°C to +125°C
Vdd (45 ns)
2.3V-3.6V
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-35
Symbol Parameter
Test Conditions Min. Max.
-45
Min. Max.
-55
Min. Max. Unit
Icc Vdd Dynamic Operating
Supply Current
Vdd = Max.,
Com. — 8
— 6
— 5 mA
Iout = 0 mA, f = fmax
Ind. — 12
— 8
— 7
CE = Vil
Auto. — 15
— 12
— 12
Vin Vdd – 0.3V, or typ.(2) 5
Vin 0.4V
Icc1 Operating
Supply Current
Vdd = Max.,
Iout = 0 mA, f = 0
CE = Vil
Vin Vdd – 0.3V, or
Vin 0.4V
Com. — 2.5
Ind. — 2.5
Auto. — 5
— 2.5
— 2.5
— 5
— 2.5
— 2.5
— 5
mA
Isb2 CMOS Standby
Vdd = Max.,
Current (CMOS Inputs) CS1 Vdd – 0.2V,
CS2 0.2V,
Vin Vdd – 0.2V, or
Vin 0.2V, f = 0
Com. — 2
Ind. — 4
Auto — 18
typ.(2) 0.6
— 2
— 4
— 18
— 2 µA
— 4
— 18
OR
ULB Control
Vdd = Max., CS1 = Vil, CS2=Vih
Vin 0.2V, f = 0; UB / LB = Vdd – 0.2V
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
09/29/09

6 Page



ページ 合計 : 15 ページ
 
PDF
ダウンロード
[ IS65WV6416DALL データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IS65WV6416DALL

ULTRA LOW POWER CMOS STATIC RAM

ISSI
ISSI


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap