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IS65WV20488EBLL の電気的特性と機能

IS65WV20488EBLLのメーカーはISSIです、この部品の機能は「ULTRA LOW POWER CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS65WV20488EBLL
部品説明 ULTRA LOW POWER CMOS STATIC RAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS65WV20488EBLL Datasheet, IS65WV20488EBLL PDF,ピン配置, 機能
IS62/65WV20488EALL
IS62/65WV20488EBLL
2Mx8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
JANUARY 2015
FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation
30 mW (typical) operating
12 µW (typical) CMOS standby
TTL compatible interface levels
Single power supply
1.65V1.98V Vdd (62/65WV20488EALL)
2.2V--3.6V Vdd (62/65WV20488EBLL)
Fully static operation: no clock or refresh
required
Industrial (-40oC to +85oC) and Automotive
(-40oC to +125oC) temperature support
BLOCK DIAGRAM
DESCRIPTION
The ISSI IS62WV20488EALL/BLL and
IS65WV20488EALL/BLL are high-speed, 16M bit static
RAMs organized as 2M words by 8 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
When is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
controls both writing and reading of the memory.
The IS62WV20488EALL/BLL and
IS65WV20488EALL/BLL are packaged in the JEDEC
standard 48-pin mini BGA (6mm x 8mm).
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
1

1 Page





IS65WV20488EBLL pdf, ピン配列
IS62/65WV20488EALL
IS62/65WV20488EBLL
TRUTH TABLE
Mode
CS2
I/O Operation
VDD Current
Not Selected
XH
X
X
High-Z
ISB1, ISB2
(Power-down)
XX
L
X
High-Z
ISB1, ISB2
Output Disabled
HL
H
H
High-Z
Icc
Read
HL
H
L
Dout
Icc
Write
LL
H
X
Din
Icc
OPERATING RANGE (VDD)
Range
Ambient Temperature
Commercial
Industrial
0°C to +70°C
40°C to +85°C
Automotive
40°C to +125°C
1.65V 1.98V
IS62WV20488EALL (55ns)
IS62WV20488EALL (55ns)
IS65WV20488EALL (55ns)
2.2V - 3.6V
IS62WV20488EBLL (45, 55ns)
IS62WV20488EBLL (45, 55ns)
IS65WV20488EBLL (55ns)
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
3


3Pages


IS65WV20488EBLL 電子部品, 半導体
IS62/65WV20488EALL
IS62/65WV20488EBLL
IS62(5)WV20488EALL DC ELECTRICAL CHARACTERISTICS-II FOR POWER
(OVER THE OPERATING RANGE)
Symbol Parameter
Test Conditions
Grade
Typ. Max.
ICC VDD Dynamic
Operating
VDD=VDD(max), IOUT=0mA, f=fMAX
Com.
Ind.
6 12
- 12
Supply Current
Auto.
- 12
ICC1 VDD Static
Operating
VDD=VDD(max), IOUT = 0mA, f=0Hz
Com.
Ind.
36
-6
Supply Current
Auto.
-6
ISB1
CMOS Standby
Current (CMOS
Inputs)
VDD=VDD(max),
(1) 0V ≤ CS2 ≤ 0.2V
or
(2) VDD - 0.2V, CS2 ≥ VDD - 0.2V
Com.
Ind.
Auto.
30 50
- 65
- 165
Note:
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VDD = VDD(typ), TA = 25C
Unit
mA
mA
µA
µA
µA
IS62(5)WV20488EBLL DC ELECTRICAL CHARACTERISTICS-II FOR POWER
(OVER THE OPERATING RANGE)
Symbol Parameter
Test Conditions
Grade
Typ. Max.
ICC VDD Dynamic
Operating
VDD=VDD(max), IOUT=0mA, f=fMAX
Com.
Ind.
6 12
- 12
Supply Current
Auto.
- 12
ICC1 VDD Static
Operating
VDD=VDD(max), IOUT = 0mA, f=0Hz
Com.
Ind.
36
-6
Supply Current
Auto.
-6
ISB1
CMOS Standby
Current (CMOS
Inputs)
VDD=VDD(max),
(1) 0V ≤ CS2 ≤ 0.2V
or
(2) VDD - 0.2V, CS2 ≥ VDD - 0.2V
Com.
Ind.
Auto.
30 50
- 65
- 165
Note:
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VDD = VDD(typ), TA = 25
Unit
mA
mA
µA
µA
µA
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
6

6 Page



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部品番号部品説明メーカ
IS65WV20488EBLL

ULTRA LOW POWER CMOS STATIC RAM

ISSI
ISSI


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