|
|
PDF IS62WV20488EALL Data sheet ( Hoja de datos )
| Número de pieza | IS62WV20488EALL | |
| Descripción | ULTRA LOW POWER CMOS STATIC RAM | |
| Fabricantes | ISSI | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IS62WV20488EALL (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
IS62/65WV20488EALL
IS62/65WV20488EBLL
2Mx8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
JANUARY 2015
FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation
– 30 mW (typical) operating
– 12 µW (typical) CMOS standby
TTL compatible interface levels
Single power supply
–1.65V—1.98V Vdd (62/65WV20488EALL)
– 2.2V--3.6V Vdd (62/65WV20488EBLL)
Fully static operation: no clock or refresh
required
Industrial (-40oC to +85oC) and Automotive
(-40oC to +125oC) temperature support
BLOCK DIAGRAM
DESCRIPTION
The ISSI IS62WV20488EALL/BLL and
IS65WV20488EALL/BLL are high-speed, 16M bit static
RAMs organized as 2M words by 8 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
When is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
controls both writing and reading of the memory.
The IS62WV20488EALL/BLL and
IS65WV20488EALL/BLL are packaged in the JEDEC
standard 48-pin mini BGA (6mm x 8mm).
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
1
1 page  
IS62/65WV20488EALL
IS62/65WV20488EBLL
ELECTRICAL CHARACTERISTICS
IS62(5)WV20488EALL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE)
Symbol
VOH
VOL
VIH(1)
VIL(1)
ILI
ILO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
IOH = -0.1 mA
IOL = 0.1 mA
GND < VIN < VDD
GND < VIN < VDD, Output Disabled
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
VDD + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Notes:
1. VILL(min) = -1.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max) = VDD + 1.0V AC (pulse width < 10ns). Not 100% tested.
IS62(5)WV20488EBLL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE)
Symbol
VOH
Parameter
Output HIGH Voltage
VOL
VIH(1)
VIL(1)
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
ILI Input Leakage
ILO Output Leakage
Test Conditions
2.2 ≤ VDD < 2.7, IOH = -0.1 mA
2.7 ≤ VDD ≤ 3.6, IOH = -1.0 mA
2.2 ≤ VDD < 2.7, IOL = 0.1 mA
2.7 ≤ VDD ≤ 3.6, IOL = 2.1 mA
2.2 ≤ VDD < 2.7
2.7 ≤ VDD ≤ 3.6
2.2 ≤ VDD < 2.7
2.7 ≤ VDD ≤ 3.6
GND < VIN < VDD
GND < VIN < VDD, Output Disabled
Min.
2.0
2.4
—
—
1.8
2.2
–0.3
–0.3
–1
–1
Max.
—
—
0.4
0.4
VDD + 0.3
VDD + 0.3
0.6
0.8
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
Notes:
1. VILL(min) = -2.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max) = VDD + 2.0V AC (pulse width < 10ns). Not 100% tested.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
5
5 Page 
IS62/65WV20488EALL
IS62/65WV20488EBLL
WRITE CYCLE NO. 3 ( CONTROLLED: IS LOW DURING WRITE CYCLE)
Notes:
If is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the previous
READ operation will drive IO BUS.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IS62WV20488EALL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IS62WV20488EALL | ULTRA LOW POWER CMOS STATIC RAM | ISSI |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |