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Número de pieza | DSI30-12AS | |
Descripción | Standard Rectifier | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! Standard Rectifier
Single Diode
Part number
DSI30-12AS
1
3
2/4
DSI30-12AS
VRRM = 1200 V
I FAV
=
30 A
VF = 1.25 V
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Applications:
● Diode for main rectification
● For single and three phase
bridge configurations
Package: TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107a
1 page DSI30-12AS
Rectifier
60
50
250
50 Hz, 80% VRRM
40
IF
30
[A]
20 TVJ = 125°C
150°C
10
TVJ = 25°C
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
200
IFSM
[A]
150
TVJ = 45°C
TVJ = 150°C
100
0.001
0.01 0.1
t [s]
1
Fig. 2 Surge overload current
500
VR = 0 V
400
300
I2t
200
[A2s]
100
TVJ = 45°C
TVJ = 150°C
0
1 2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time per diode
50
40
Ptot 30
[W] 20
DC =
1
0.5
0.4
0.33
0.17
0.08
10
RthHA:
0.6 K/W
0.8 K/W
1 K/W
2 K/W
4 K/W
8 K/W
40
30
IF(AV)M
20
[A]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 10 20 30 0 50 100 150 200
IF(AV)M [A]
Tamb [°C]
Fig. 4 Power dissipation vs. direct output current and ambient temperature
0
0 50 100 150 200
TC [°C]
Fig. 5 Max. forward current vs.
case temperature
1.0
0.8
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10 100 1000
t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.03
0.0004
2 0.08
0.002
3 0.2
0.003
4 0.39
0.03
5 0.2
0.29
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107a
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet DSI30-12AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
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