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GB20B60PD1 の電気的特性と機能

GB20B60PD1のメーカーはInternational Rectifierです、この部品の機能は「IRGB20B60PD1」です。


製品の詳細 ( Datasheet PDF )

部品番号 GB20B60PD1
部品説明 IRGB20B60PD1
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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GB20B60PD1 Datasheet, GB20B60PD1 PDF,ピン配置, 機能
PD - 94613A
SMPS IGBT IRGB20B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Equivalent MOSFET
Parameters 
RCE(on) typ. = 158m
ID (FET equivalent) = 20A
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
GCE
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
40
22
80
80
10
4
16
±20
215
86
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
0.58
5.0
–––
80
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1 www.irf.com
12/10/03

1 Page





GB20B60PD1 pdf, ピン配列
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
10
1
0
10
100 1000
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
40
35
VGE = 15V
VGE = 12V
30
VGE = 10V
VGE = 8.0V
25 VGE = 6.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
www.irf.com
IRGB20B60PD1
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
40
35 VGE = 15V
VGE = 12V
30 VGE = 10V
VGE = 8.0V
25 VGE = 6.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
40
35 VGE = 18V
VGE = 15V
30 VGE = 12V
VGE = 10V
25 VGE = 8.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
3


3Pages


GB20B60PD1 電子部品, 半導体
IRGB20B60PD1
50
45 IF = 8.0A
IF = 4.0A
40
35
30
25
VR = 200V
TJ = 125°C
TJ = 25°C
20
100
di f /dt - (A/µs)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
200
VR = 200V
TJ = 125°C
TJ = 25°C
160
IF = 8.0A
120 IF = 4.0A
80
40
0
100
di f /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
14
VR = 200V
TJ = 125°C
12 TJ = 25°C
I F = 8.0A
10
IF = 4.0A
8
6
4
2
0
100 1000
dif /dt - (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
1000
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 8.0A
I F = 4.0A
100
100
di f /dt - (A/µs)
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
A
1000
6 www.irf.com

6 Page



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部品番号部品説明メーカ
GB20B60PD1

IRGB20B60PD1

International Rectifier
International Rectifier


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