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PZU12B の電気的特性と機能

PZU12BのメーカーはNXP Semiconductorsです、この部品の機能は「Single Zener diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 PZU12B
部品説明 Single Zener diodes
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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PZU12B Datasheet, PZU12B PDF,ピン配置, 機能
PZUxB series
Single Zener diodes in a SOD323F package
Rev. 02 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface
Mounted Device (SMD) plastic package.
1.2 Features
„ Total power dissipation: 310 mW
„ Tolerance series: B: approximately ±5 %; B1, B2, B3: sequential, approximately ±2 %
„ Small plastic package suitable for surface mounted design
„ Wide working voltage range: nominal 2.4 V to 36 V
1.3 Applications
„ General regulation functions
1.4 Quick reference data
Table 1.
Symbol
VF
Ptot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
IF = 100 mA
Tamb 25 °C
Min Typ Max Unit
[1] - - 1.1 V
[2] - - 310 mW
[3] - - 550 mW
[1] Pulse test: tp 300 μs; δ ≤ 0.02
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.

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PZU12B pdf, ピン配列
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IF forward current
IZSM non-repetitive peak reverse
current
-
-
PZSM
non-repetitive peak reverse
power dissipation
[1] -
Ptot total power dissipation Tamb 25 °C [2] -
[3] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Max
200
see Table 8
and 9
40
Unit
mA
W
310
550
150
+150
+150
mW
mW
°C
°C
°C
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 400 K/W
[2] - - 230 K/W
[3] - - 55 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
[3] Soldering point of cathode tab
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
VF forward voltage IF = 10 mA
IF = 100 mA
[1] Pulse test: tp 300 μs; δ ≤ 0.02
Min Typ Max Unit
[1] - - 0.9 V
[1] - - 1.1 V
PZUXB_SER_2
Product data sheet
Rev. 02 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
3 of 12


3Pages


PZU12B 電子部品, 半導体
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 9. Characteristics per type; PZU6.2B to PZU36B …continued
Tj = 25 °C unless otherwise specified
PZU
xxx
Sel Working
voltage
VZ (V);
IZ = 5 mA
Maximum differential
resistance
rdif (Ω)
Reverse
current
IR (nA)
Temperature Diode
coefficient capacitance
SZ (mV/K);
IZ = 5 mA
Cd (pF)[1]
Min Max IZ = 0.5 mA IZ = 5 mA Max VR (V) Typ
Max
15 B 13.84 15.52 80 15 50 11 11.4 99
Non-repetitive peak
reverse current
IZSM (A)[2]
Max
2
B1 13.84 14.46
B2 14.34 14.98
B3 14.85 15.52
16 B 15.37 17.09 80 20 50 12 12.4 97
1.5
B1 15.37 16.01
B2 15.85 16.51
B3 16.35 17.09
18 B 16.94 19.03 80 20 50 13 14.4 93
1.5
B1 16.94 17.70
B2 17.56 18.35
B3 18.21 19.03
20 B 18.86 21.08 100
20
50 15 16.4
88
1.5
B1 18.86 19.70
B2 19.52 20.39
B3 20.21 21.08
22 B 20.88 23.17 100
25
50 17 18.4
84
1.3
B1 20.88 21.77
B2 21.54 22.47
B3 22.23 23.17
24 B 22.93 25.57 120
30
50 19 20.4
80
1.3
B1 22.93 23.96
B2 23.72 24.78
B3 24.54 25.57
27 B 25.1 28.9 150
40
50 21 23.4
73
1
30 B 28 32 200
40
50 23 26.6
66
1
33 B 31 35 250
40
50 25 29.7
60
0.9
36 B 34 38 300
60
50 27 33.0
59
0.8
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 μs; square wave; Tj = 25 °C prior to surge
PZUXB_SER_2
Product data sheet
Rev. 02 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
6 of 12

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共有リンク

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部品番号部品説明メーカ
PZU12B

Single Zener diodes

NXP Semiconductors
NXP Semiconductors
PZU12BA

Single Zener diodes

NXP Semiconductors
NXP Semiconductors


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