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Datasheet PJF5NA50 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PJF5NA50 | 500V N-Channel MOSFET PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50
500V N-Channel MOSFET
Voltage
500 V Current
5A
Features
RDS(ON), VGS@10V,[email protected]<1.55Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/6 | Pan Jit International | mosfet |
PJF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PJF10N60 | 600V N-Channel Enhancement Mode MOSFET PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
2 | PJF10N65 | 650V N-Channel Enhancement Mode MOSFET PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
3 | PJF12N65 | 650V N-Channel Enhancement Mode MOSFET PJP12N65 / PJF12N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
4 | PJF13N50 | 500V N-Channel Enhancement Mode MOSFET PJP13N50 / PJF13N50
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS Pan Jit International mosfet | | |
5 | PJF20N65 | 650V N-Channel MOSFETs 650V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e Potens semiconductor mosfet | | |
6 | PJF24N10 | 100V N-Channel Enhancement Mode MOSFET PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch and Syn Pan Jit International mosfet | | |
7 | PJF2N60 | 600V N-Channel Enhancement Mode MOSFET PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In com Pan Jit International mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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