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MS10N80 の電気的特性と機能

MS10N80のメーカーはBruckewellです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MS10N80
部品説明 N-Channel MOSFET
メーカ Bruckewell
ロゴ Bruckewell ロゴ 




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MS10N80 Datasheet, MS10N80 PDF,ピン配置, 機能
MS10N80
800V N-Channel MOSFET
Description
The MS10N80 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 46nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.10 Ω (Typ.) @VGS=10V
100% Avalanche Tested
RoHS compliant package
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID
IDM
EAS
EAR
IAR
dv/dt
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C) 44 W
PD
Derating Factor above 25 °C
Value
800
±30
10
6.5
40
960
24
9.2
4.0
60
0.48
Unit
V
V
A
A
A
mJ
mJ
A
V/ns
W
W/°C
Publication Order Number: [MS10N80]
© Bruckewell Technology Corporation Rev. A -2014

1 Page





MS10N80 pdf, ピン配列
MS10N80
800V N-Channel MOSFET
tf Turn-Off Fall Time
Dynamic Characteristics
Symbol Parameter
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 640 V,ID = 10 A,
VGS = 10 V
--
Min
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
Symbol Parameter
Test Conditions
IS Continuous Source-Drain Diode Forward Current
ISM ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7 A , VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7 A , VGS = 0 V
diF/dt=100A/μs
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=18mH, IAS=10A, VDD=5V, RG=25Ω, Starting TJ=25
3. ISD7A, di/dt200A/μs,VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width 300μs, Duty Cycle2%
5. Essentially Independent of Operating Temperature
Min
--
--
--
--
--
90
Typ.
46
15
20
-- ns
Max.
--
--
--
Units
nC
nC
nC
Typ.
--
--
--
730
12
Max.
10
40
1.4
--
--
Units
A
V
ns
μC
Publication Order Number: [MS10N80]
© Bruckewell Technology Corporation Rev. A -2014


3Pages


MS10N80 電子部品, 半導体
MS10N80
800V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS10N80]
© Bruckewell Technology Corporation Rev. A -2014

6 Page



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部品番号部品説明メーカ
MS10N80

N-Channel MOSFET

Bruckewell
Bruckewell


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