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CMZ16のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon Diffused Type Zener Diode」です。 |
部品番号 | CMZ16 |
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部品説明 | Silicon Diffused Type Zener Diode | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとCMZ16ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
○ Surge absorber
CMZ12 to CMZ51
TOSHIBA Zener Diode Silicon Diffused Type
CMZ12 to CMZ51
Unit: mm
• Average power dissipation : P = 2 W
• Zener voltage
: VZ = 12 to 51 V
• Suitable for compact assembly due to small
surface mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Symbol Rating Unit
P 2 (Note 1) W
1. Anode
2. Cathode
Junction temperature
Tj −40 to 150 °C
Storage temperature range Tstg −40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size
: 50 mm × 50 mm
Land Pattern size : 2 mm × 2 mm
Board thickness : 0.64 mm
JEDEC
JEITA
TOSHIBA
Weight: 0.023 g (typ.)
―
―
3-4E1S
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Dimensions (for reference only)
Unit: mm
1.4 3.0
1.4
1
Start of commercial production
2002-10
2015-05-15
1 Page CMZ12 to CMZ51
Handling Precaution
1) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend when you design a circuit with a device.
P : We recommend that the worst case power dissipation be no greater than 50% of the
absolute maximum rating of power dissipation. Carry out adequate heat design.
PRSM : We recommend that a device be used within the recommended area in the figure,
PRSM-tw.
Tj : Derate this rating when using a device in order to ensure high reliability.
We recommend that the device be used at a Tj of below 120°C.
2) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition.
When using a device, design a circuit board and a land pattern size to match the appropriate thermal
resistance value.
3) Please refer to the Rectifiers databook for further information.
3 2015-05-15
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ CMZ16 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
CMZ12 | Silicon Diffused Type Zener Diode | Toshiba Semiconductor |
CMZ13 | Silicon Diffused Type Zener Diode | Toshiba Semiconductor |
CMZ15 | Silicon Diffused Type Zener Diode | Toshiba Semiconductor |
CMZ16 | Silicon Diffused Type Zener Diode | Toshiba Semiconductor |