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MMBZ15VDLT3G の電気的特性と機能

MMBZ15VDLT3GのメーカーはON Semiconductorです、この部品の機能は「40 Watt Peak Power Zener Transient Voltage Suppressors」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBZ15VDLT3G
部品説明 40 Watt Peak Power Zener Transient Voltage Suppressors
メーカ ON Semiconductor
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MMBZ15VDLT3G Datasheet, MMBZ15VDLT3G PDF,ピン配置, 機能
MMBZxxVxL,
SZMMBZxxVxL Series
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Cathode Zeners
for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
The SZ/MMBZ27VCL can be used to protect a single wire
communication network form EMI and ESD transient surge voltages.
The SZ/MMBZ27VCL is recommended by the
Society of Automotive Engineers (SAE), February 2000, J2411
“Single Wire Can Network for Vehicle Applications” specification as
a solution for transient voltage problems.
Specification Features:
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 12.8 V, 22 V, 31.2 V
Standard Zener Breakdown Voltage Range − 15 V, 27 V, 39 V
Peak Power − 40 W @ 1.0 ms (Bidirectional),
per Figure 5 Waveform
ESD Rating of Class 3B (exceeding 16 kV) per the Human
Body Model
ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
Low Leakage < 100 nA
Flammability Rating: UL 94 V−O
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
www.onsemi.com
SOT−23
CASE 318
STYLE 9
ANODE 1
ANODE 2
3 CATHODE
MARKING DIAGRAM
XXX MG
G
1
XXX = 15D, 27C or 39C
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
MMBZ15VDLT1G, SOT−23
SZMMBZ15VDLT1G (Pb−Free)
MMBZ15VDLT3G, SOT−23
SZMMBZ15VDLT3G (Pb−Free)
MMBZxxVCLT1G, SOT−23
SZMMBZxxVCLT1G (Pb−Free)
MMBZxxVCLT3G, SOT−23
SZMMBZxxVCLT3G (Pb−Free)
Shipping
3,000 /
Tape & Reel
10,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 15
1
Publication Order Number:
MMBZ15VDLT1/D

1 Page





MMBZ15VDLT3G pdf, ピン配列
MMBZxxVxL, SZMMBZxxVxL Series
TYPICAL CHARACTERISTICS
MMBZ15VDL, SZMMBZ15VDL
17
BIDIRECTIONAL
16
MMBZ27VCL, SZMMBZ27VCL
29
BIDIRECTIONAL
28
15 27
14
UNIDIRECTIONAL
13
- 40 + 25 + 85 + 125
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
26
25
- 55 + 25 + 85 + 125
TEMPERATURE (°C)
Figure 2. Typical Breakdown Voltage
versus Temperature
1000
100
10
1
0.1
0.01
- 40
+ 25 + 85
TEMPERATURE (°C)
Figure 3. Typical Leakage Current
versus Temperature
+ 125
300
250
ALUMINA SUBSTRATE
200
150
100
FR-5 BOARD
50
0
0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 4. Steady State Power Derating Curve
tr 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
100
PEAK VALUE — IPP
50% OF IPP.
HALF VALUE —
IPP
2
50
tP
0
0 12 3 4
t, TIME (ms)
Figure 5. Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
www.onsemi.com
3


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部品番号部品説明メーカ
MMBZ15VDLT3G

40 Watt Peak Power Zener Transient Voltage Suppressors

ON Semiconductor
ON Semiconductor


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