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MUN5311DW1T1 の電気的特性と機能

MUN5311DW1T1のメーカーはON Semiconductorです、この部品の機能は「Dual Bias Resistor Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 MUN5311DW1T1
部品説明 Dual Bias Resistor Transistors
メーカ ON Semiconductor
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MUN5311DW1T1 Datasheet, MUN5311DW1T1 PDF,ピン配置, 機能
MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5311DW1T1 series,
two complementary BRT devices are housed in the SOT−363 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
RqJA
Symbol
PD
Thermal Resistance −
Junction-to-Ambient
Thermal Resistance −
Junction-to-Lead
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
RqJA
RqJL
TJ, Tstg
Max
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
670 (Note 1)
490 (Note 2)
Max
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 9
1
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
6
1
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
XXd
1
XX = Specific Device Code
d = Date Code
= (See Page 2)
ORDERING AND DEVICE MARKING
INFORMATION
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUN5311DW1T1/D

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MUN5311DW1T1 pdf, ピン配列
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
hFE 35 60
60 100
80 140
80 140
160 350
160 350
3.0 5.0
8.0 15
15 30
80 200
80 150
80 140
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1
(IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
VCE(sat)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5313DW1T1
MUN5330DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
VOL
VOH
4.9
Input Resistor
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1 7.0 10
15.4 22
32.9 47
7.0 10
7.0 10
3.3 4.7
0.7 1.0
1.5 2.2
3.3 4.7
3.3 4.7
15.4 22
1.54 2.2
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Max Unit
0.25 Vdc
Vdc
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
− Vdc
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
0.25
1.2
0.185
0.56
0.056
kW
http://onsemi.com
3


3Pages


MUN5311DW1T1 電子部品, 半導体
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR
1
IC/IB = 10
1000
VCE = 10 V
TA = −25°C
0.1 100
25°C
75°C
TA = 75°C
25°C
−25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
4 100 75°C 25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01 VO = 5 V
0
0
10
20
30 40
50
0.001
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
VO = 0.2 V
10
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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6 Page



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共有リンク

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