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MUN5311DW1T1 の電気的特性と機能

MUN5311DW1T1のメーカーはMotorola Semiconductorsです、この部品の機能は「Dual Bias Resistor Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 MUN5311DW1T1
部品説明 Dual Bias Resistor Transistors
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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MUN5311DW1T1 Datasheet, MUN5311DW1T1 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN5311DW1T1/D
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT–363 package which is ideal for low power surface mount applications
where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5311DW1T1
SERIES
Motorola Preferred Devices
65
4
123
CASE 419B–01, STYLE 1
SOT–363
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
50
Vdc
VCEO
50
Vdc
IC 100 mAdc
Thermal Resistance — Junction-to-Ambient (surface mounted)
RθJA
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C(1)
TJ, Tstg
PD
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
833
– 65 to +150
*150
°C/W
°C
mW
Device
Marking
R1 (K)
R2 (K)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1(2)
MUN5316DW1T1(2)
MUN5330DW1T1(2)
MUN5331DW1T1(2)
MUN5332DW1T1(2)
MUN5333DW1T1(2)
MUN5334DW1T1(2)
MUN5335DW1T1(2)
11
12
13
14
15
16
30
31
32
33
34
35
10 10
22 22
47 47
10 47
10
4.7
1.0 1.0
2.2 2.2
4.7 4.7
4.7 47
22 47
2.2 47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1

1 Page





MUN5311DW1T1 pdf, ピン配列
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
(Continued)
Characteristic
Symbol
Min
Typ
Max Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
VOH
4.9
— Vdc
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5330DW1T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
Input Resistor
MUN5311DW1T1
R1
7.0 10
13 k
MUN5312DW1T1
15.4 22 28.6
MUN5313DW1T1
32.9 47 61.1
MUN5314DW1T1
7.0 10 13
MUN5315DW1T1
7.0 10 13
MUN5316DW1T1
3.3 4.7 6.1
MUN5330DW1T1
0.7 1.0 1.3
MUN5331DW1T1
1.5 2.2 2.9
MUN5332DW1T1
3.3 4.7 6.1
MUN5333DW1T1
3.3 4.7 6.1
MUN5334DW1T1
15.4 22 28.6
MUN5335DW1T1
1.54 2.2 2.86
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056
250
200
150
100
50
0
– 50
RθJA = 833°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3


3Pages


MUN5311DW1T1 電子部品, 半導体
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5312DW1T1 NPN TRANSISTOR
1
IC/IB = 10
0.1 TA = –25°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.001
0
4
3
2
1
0
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
50
f = 1 MHz
IE = 0 V
TA = 25°C
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
100
VO = 0.2 V
10
50
1
10
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100 75°C 25°C
TA = –25°C
10
1
0.1
0.01
0.001
0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 15. Output Current versus Input Voltage
TA = –25°C
75°C 25°C
0.1
0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

6 Page



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