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NSBC143TPDXV6のメーカーはON Semiconductorです、この部品の機能は「Complementary Bias Resistor Transistors」です。 |
部品番号 | NSBC143TPDXV6 |
| |
部品説明 | Complementary Bias Resistor Transistors | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとNSBC143TPDXV6ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
MUN5316DW1,
NSBC143TPDXV6
Complementary Bias
Resistor Transistors
R1 = 4.7 kW, R2 = 8 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
−NPN
−PNP
VCBO
VCEO
IC
VIN(fwd)
VIN(rev)
50
50
100
30
6
5
Vdc
Vdc
mAdc
Vdc
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5316DW1T1G
NSVMUN5316DW1T1G*
SOT−363
3,000 / Tape & Reel
NSBC143TPDXV6T1G,
NSVBC143TPDXV6T1G*
SOT−563
4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
16 M G
G
1
SOT−363
CASE 419B
16 M G
G
1
SOT−563
CASE 463A
16 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 3
1
Publication Order Number:
DTC143TP/D
1 Page MUN5316DW1, NSBC143TPDXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted)
Characteristic
Symbol Min Typ Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
− − 100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
− − 500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
− − 1.9
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
hFE
160 350
−
Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
− 0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA) (NPN)
(VCE = 0.2 V, IC = 10 mA) (PNP)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Vi(off)
Vi(on)
VOL
− 0.6 −
0.58
− 0.9 −
1.0
− − 0.2
Vdc
Vdc
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
VOH
4.9 −
−
Vdc
R1
3.3 4.7 6.1
kW
Resistor Ratio
R1/R2 − − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
400
350
300
(1) SOT−363; 1.0 x 1.0 inch Pad
250 (2) SOT−563; Minimum Pad
200
(1) (2)
150
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
3
3Pages MUN5316DW1, NSBC143TPDXV6
PACKAGE DIMENSIONS
E
2X
bbb H D
e
6X ccc C
D
A
65
12
SC−88/SC70−6/SOT−363
CASE 419B−02
2X ISSUE Y
aaa H D
D
4
E1
L2
3
aaa C
2X 3 TIPS
H
L
DETAIL A
GAGE
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
B
TOP VIEW
6X b
ddd M C A-B D
A2
A
DETAIL A
A1
SIDE VIEW
C
SEATING
PLANE
c
END VIEW
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A −−− −−− 1.10 −−− −−− 0.043
A1 0.00 −−− 0.10 0.000 −−− 0.004
A2 0.70 0.90 1.00 0.027 0.035 0.039
b 0.15 0.20 0.25 0.006 0.008 0.010
C 0.08 0.15 0.22 0.003 0.006 0.009
D 1.80 2.00 2.20 0.070 0.078 0.086
E 2.00 2.10 2.20 0.078 0.082 0.086
E1 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 BSC
0.026 BSC
L 0.26 0.36 0.46 0.010 0.014 0.018
L2 0.15 BSC
0.006 BSC
aaa 0.15
0.006
bbb 0.30
0.012
ccc 0.10
0.004
ddd 0.10
0.004
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
6
6 Page | |||
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部品番号 | 部品説明 | メーカ |
NSBC143TPDXV6 | Complementary Bias Resistor Transistors | ON Semiconductor |