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PDF IXFN280N085 Data sheet ( Hoja de datos )
| Número de pieza | IXFN280N085 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFETTM Power
MOSFETs Single Die
MOSFET
IXFN280N085
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
dV/dt
Pd
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C, Chip capability
External Lead Current Limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
50/60 Hz, RMS t = 1min
IISOL ≤ 1mA
t = 1s
Mounting torque
Terminal connection torque
Maximum Ratings
85
85
±20
±30
V
V
V
V
280
200
1120
A
A
A
200 A
4J
5 V/ns
700 W
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ
=
25°C, unless
Min.
otherwise specified)
Typ. Max.
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 100A, Note 1
85
2.0
4.0
±200
100
2
4.4
V
V
nA
μA
mA
mΩ
VDSS = 85V
ID25 = 280A
≤RDS(on) 4.4mΩ
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS(on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche rated
• Guaranteed FBSOA
• Low package inductance
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
© 2008 IXYS Corporation, All rights reserved
DS98747B(12/08)
1 page  
10,000
Fig. 12. Forward-Bias Safe Operating Area
@ TC = 25ºC
IXFN280N085
10,000
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 75ºC
RDS(on) Limit
1,000
100
External-Lead Limit
10
TJ = 150ºC
TC = 25ºC
Single Pulse
1
1
10
VDS - Volts
100µs
RDS(on) Limit
1,000
1ms
10ms
100ms
DC
100
100
External-Lead Limit
10
TJ = 150ºC
TC = 75ºC
Single Pulse
1
1
10
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
100
© 2008 IXYS Corporation, All rights reserved
IXYS REF: F_280N085(9Y-N17)12-02-08-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFN280N085.PDF ] | |
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