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STP9NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STP9NM60N |
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部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTP9NM60Nダウンロード(pdfファイル)リンクがあります。 Total 16 pages
STD9NM60N
STF9NM60N, STP9NM60N
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK
MDmesh™ II Power MOSFET
Features
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
VDSS
(@Tjmax)
RDS(on)
max.
650 V < 0.745 Ω
ID
6.5 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
Marking
9NM60N
Packages
DPAK
TO-220FP
TO-220
!-V
Packaging
Tape and reel
Tube
October 2010
Doc ID 18063 Rev 1
1/16
www.st.com
16
1 Page STD9NM60N, STF9NM60N, STP9NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (2)
PTOT
VISO
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 6.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb (1)
Thermal resistance junction-case max
Thermal resistance junction-pcb minimum
footprint
Rthj-amb
Tl
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
Unit
TO-220, DPAK TO-220FP
600
± 25
6.5
4
26
70
6.5 (1)
4 (1)
26 (1)
25
V
V
A
A
A
W
2500
V
15
- 55 to 150
150
V/ns
°C
°C
Value
Unit
DPAK TO-220 TO-220FP
1.79 5 °C/W
50 °C/W
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.5
115
Unit
A
mJ
Doc ID 18063 Rev 1
3/16
3Pages Electrical characteristics
STD9NM60N, STF9NM60N, STP9NM60N
2.1 Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area for TO-220
Figure 3.
AM08162v1
Thermal impedance for TO-220
10
10µs
100µs
1 1ms
10ms
Tj=150°C
0.1 Tc=25°C
Single pulse
0.01
0.1
1
10 100 VDS(V)
Figure 4.
ID
(A)
Safe operating area for DPAK
Figure 5.
AM08163v1
Thermal impedance for DPAK
10 10µs
1
0.1
0.01
0.1
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
10 100 VDS(V)
Figure 6.
ID
(A)
Safe operating area for TO-220FP Figure 7.
AM08164v1
Thermal impedance for TO-220FP
10
1
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10ms
10 100 VDS(V)
6/16 Doc ID 18063 Rev 1
6 Page | |||
ページ | 合計 : 16 ページ | ||
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部品番号 | 部品説明 | メーカ |
STP9NM60 | N-channel Power MOSFET | STMicroelectronics |
STP9NM60N | N-channel Power MOSFET | STMicroelectronics |