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STF9NM60N の電気的特性と機能

STF9NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STF9NM60N
部品説明 N-channel Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STF9NM60N Datasheet, STF9NM60N PDF,ピン配置, 機能
STD9NM60N
STF9NM60N, STP9NM60N
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK
MDmesh™ II Power MOSFET
Features
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
VDSS
(@Tjmax)
RDS(on)
max.
650 V < 0.745 Ω
ID
6.5 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
Marking
9NM60N
Packages
DPAK
TO-220FP
TO-220
!-V
Packaging
Tape and reel
Tube
October 2010
Doc ID 18063 Rev 1
1/16
www.st.com
16

1 Page





STF9NM60N pdf, ピン配列
STD9NM60N, STF9NM60N, STP9NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (2)
PTOT
VISO
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 6.5 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb (1)
Thermal resistance junction-case max
Thermal resistance junction-pcb minimum
footprint
Rthj-amb
Tl
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
Unit
TO-220, DPAK TO-220FP
600
± 25
6.5
4
26
70
6.5 (1)
4 (1)
26 (1)
25
V
V
A
A
A
W
2500
V
15
- 55 to 150
150
V/ns
°C
°C
Value
Unit
DPAK TO-220 TO-220FP
1.79 5 °C/W
50 °C/W
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.5
115
Unit
A
mJ
Doc ID 18063 Rev 1
3/16


3Pages


STF9NM60N 電子部品, 半導体
Electrical characteristics
STD9NM60N, STF9NM60N, STP9NM60N
2.1 Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area for TO-220
Figure 3.
AM08162v1
Thermal impedance for TO-220
10
10µs
100µs
1 1ms
10ms
Tj=150°C
0.1 Tc=25°C
Single pulse
0.01
0.1
1
10 100 VDS(V)
Figure 4.
ID
(A)
Safe operating area for DPAK
Figure 5.
AM08163v1
Thermal impedance for DPAK
10 10µs
1
0.1
0.01
0.1
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
10 100 VDS(V)
Figure 6.
ID
(A)
Safe operating area for TO-220FP Figure 7.
AM08164v1
Thermal impedance for TO-220FP
10
1
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10ms
10 100 VDS(V)
6/16 Doc ID 18063 Rev 1

6 Page



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部品番号部品説明メーカ
STF9NM60N

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics


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