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PDF MURF1660DR Data sheet ( Hoja de datos )
| Número de pieza | MURF1660DR | |
| Descripción | 16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier | |
| Fabricantes | Thinki Semiconductor | |
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Hay una vista previa y un enlace de descarga de MURF1660DR (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MURF1620DR thru MURF1660DR
®
MURF1620DR thru MURF1660DR
Pb Free Plating Product
Pb
16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit : inch (mm)
Mechanical Data
Case: Fully isolated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
Case
Case
Case
Case
Positive
Negative
Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C"
Suffix "A"
Suffix "D"
Suffix "DR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MURF1620DR MURF1640DR MURF1660DR UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
200
140
200
400
280
400
16.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98
1.3
5.0
250
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
600 V
420 V
600 V
A
A
1.7 V
uA
uA
nS
pF
oCW
oC
Rev.05
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MURF1660DR.PDF ] | |
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