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PDF MMBTA13 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA13 | |
| Descripción | Darlington Amplifier Transistor NPN Silicon | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
3
1
2
COLLECTOR 3
BASE 1
EMITTER 2
A
L
3
BS
12
VG
FEATURES
C
Power dissipation
D
PCM : 0.3W Tamb=25
Collector current
ICM : 0.3A
Collector-base voltage
V(BR)CBO : 30V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100μA， IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO Ic= 100uA， IB=0
30
Collector-emitter breakdown voltage
V(BR)EBO IE= 100μA， Ic=0
10
MAX
Collector cut-off current
ICBO
VCB=30 V , IE=0
0.1
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE(1) *
hFE(2) *
VCE (sat) *
VEB= 10V , IC=0
VCE=5V, IC= 10mA
VCE=5V, IC= 100mA
IC=100 mA, IB=0.1mA
MMBTA13
MMBTA14
MMBTA13
MMBTA14
5000
10000
10000
20000
0.1
1.5
Base-emitter voltage
VBE *
VCE=5V,IC= 100mA
2.0
Transition frequency
fT
VCE=5V, IC= 10mA
f=100MHz
125
UNIT
V
V
V
μA
μA
V
V
MHz
* Pulse Test : pulse width≤300μs，duty cycle≤2%。
Marking : MMBTA13:K2D；MMBTA14：K3D
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MMBTA13.PDF ] | |
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