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VS23S010C-S の電気的特性と機能

VS23S010C-SのメーカーはVLSIです、この部品の機能は「1 Megabit SPI SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS23S010C-S
部品説明 1 Megabit SPI SRAM
メーカ VLSI
ロゴ VLSI ロゴ 




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VS23S010C-S Datasheet, VS23S010C-S PDF,ピン配置, 機能
VS23S010C-S Datasheet
VS23S010C-S - 1 Megabit SPI SRAM
with Dual-I/O and Quad-I/O
Features
Flexible 1.5V - 3.6V operating voltage
131,072 x 8-bit SRAM organization
Serial Peripheral Interface (SPI) mode
0 compatible
Byte, Page and Sequential modes
Supports Single, Dual and Quad
I/O read and write
Fast operation: the whole mem-
ory can be filled in 262158 or read
in 262159 cycles (Quad-I/O SPI,
Quad address mode)
XCS
SO/IO1
XWP/IO2
GND
1
2
3
4
8 VCC
7 XHOLD/IO3
6 SCLK
5 SI/IO1
Figure 1: SOIC8 narrow package, compatible
with standard pin out (not to scale).
Operating Modes
XHOLD and XWP pins
High operating frequencies
Up to 36 MHz for SPI
Active Low-power
Read current 200 µA at 1 MHz (Sin-
gle I/O, SO=0, TA=+85C, VDD=3.3V)
Industrial temperature range
-40C to + 85C
Pb-Free and RoHS compliant
1,048,576 bit
(128K x 8)
SRAM
Array
Description
The VLSI Solution VS23S010C-S is an easy-
to-use and versatile serial SRAM device. The
memory is accessed via an SPI compatible
serial bus.
Applications
Microcontroller RAM extension
VoIP and internet data stream buffer
Audio data buffer
SPI
Serial Interface
Figure 2: VS23S010C-S blocks
In SPI mode SRAM and control registers can
be accessed. Dual-I/O and Quad-I/O modes
are used only for SRAM read and write.
Following are connection examples for differ-
ent operating modes. Some I/Os of VS23S010C-
S are unconnected, because they have inter-
nal pull-up or pull-down resistors. Note also,
Version: 0.9 [Preliminary], 2015-01-16
1

1 Page





VS23S010C-S pdf, ピン配列
VS23S010C-S Datasheet
CONTENTS
Contents
VS23S010C-S
1
Table of Contents
3
List of Figures
4
1 Disclaimer
5
2 Definitions
5
3 Electrical Characteristics & Specifications
6
3.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.3 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.3.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.3.2 SPI Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.4 Current Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.4.1 SPI Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Packages and Pin Descriptions
12
4.1 Narrow SOIC8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Connection Guidelines
13
6 Device Operation
14
6.1 SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.1.1 Word, Page and Sequential Operation Modes . . . . . . . . . . . . . 15
6.1.2 Dual-I/O and Quad-I/O Operation . . . . . . . . . . . . . . . . . . . . 17
7 SPI Commands and Addressing
20
7.1 SPI Read Commands (03h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7.1.1 Dual-Output Read (3Bh and BBh) . . . . . . . . . . . . . . . . . . . . 21
7.1.2 Quad-Output Read (6Bh and EBh) . . . . . . . . . . . . . . . . . . . 22
7.2 SPI Write Commands (02h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7.2.1 Dual-Input Write (A2h and 22h) . . . . . . . . . . . . . . . . . . . . . 25
7.2.2 Quad-Input Write (32h and B2h) . . . . . . . . . . . . . . . . . . . . . 25
7.3 SPI Miscellaneous Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.1 Read Status Register (05h) . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.2 Write Status Register (01h) . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.3 Read Manufacturer and Device ID (9Fh) . . . . . . . . . . . . . . . . 29
8 Known Issues
30
8.1 Powering Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8.2 Idle Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9 Document Version Changes
31
10 Contact Information
32
Version: 0.9 [Preliminary], 2015-01-16
3


3Pages


VS23S010C-S 電子部品, 半導体
VS23S010C-S Datasheet
3 ELECTRICAL CHARACTERISTICS & SPECIFICATIONS
3 Electrical Characteristics & Specifications
3.1 Absolute Maximum Ratings
Parameter
Symbol Min Max Unit
Positive Supply
Current at any non-power pin1
Voltage at any digital input
Operating temperature
Storage temperature
ESD protection on any pin3
VDD
-0.3 3.6 V
±50 mA
-0.3 VDD+0.32 V
-40 +85 C
-65 +150 C
2.0 kV
1 Higher current can cause latch-up.
2 Must not exceed 3.6 V
3 Human Body Model (HBM) MIL-STD-883E Method 3015.7
3.2 DC Characteristics
TA = -40 ... +85 C
Parameter
Positive supply voltage
High-level input voltage
Low-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
I/O leakage current 2
Pull-up current
I/O capacitance 4
RAM data retention voltage 3,4
Start-up time after power-up 5
Min
1.5
0.7×VDD
-0.2
-0.2
0.7×VDD
-1.0
-5.0
Typ
0.6
(TBD)
Max
3.6
VDD+0.31
0.3×VDD
0.25×VDD
0.3×VDD
1.0
-1.1
(TBD)
1.0
(TBD) 4
Unit
V
V
V
V
V
V
µA
µA
pF
V
ms
Test Conditions
Any Schmitt-trigger pin
IO = -1.0 mA
IO = 1.0 mA
Pin as input or High-Z
Any pull-up pin
VDD=0V, f=0.5MHz, TA=+25 C
1 Must not exceed 3.6V
2 Excluding the pins with pull-up or pull-down resistors
3 This is the limit to which VDD can be lowered without losing RAM data.
4 This parameter is periodically sampled and is not 100% tested.
5 Refer to Chapter 8.1 for additional information.
Version: 0.9 [Preliminary], 2015-01-16
6

6 Page



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部品番号部品説明メーカ
VS23S010C-S

1 Megabit SPI SRAM

VLSI
VLSI


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