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VS23S010C-SのメーカーはVLSIです、この部品の機能は「1 Megabit SPI SRAM」です。 |
部品番号 | VS23S010C-S |
| |
部品説明 | 1 Megabit SPI SRAM | ||
メーカ | VLSI | ||
ロゴ | |||
このページの下部にプレビューとVS23S010C-Sダウンロード(pdfファイル)リンクがあります。 Total 30 pages
VS23S010C-S Datasheet
VS23S010C-S - 1 Megabit SPI SRAM
with Dual-I/O and Quad-I/O
Features
• Flexible 1.5V - 3.6V operating voltage
• 131,072 x 8-bit SRAM organization
• Serial Peripheral Interface (SPI) mode
0 compatible
– Byte, Page and Sequential modes
– Supports Single, Dual and Quad
I/O read and write
– Fast operation: the whole mem-
ory can be filled in 262158 or read
in 262159 cycles (Quad-I/O SPI,
Quad address mode)
XCS
SO/IO1
XWP/IO2
GND
1
2
3
4
8 VCC
7 XHOLD/IO3
6 SCLK
5 SI/IO1
Figure 1: SOIC8 narrow package, compatible
with standard pin out (not to scale).
Operating Modes
– XHOLD and XWP pins
• High operating frequencies
– Up to 36 MHz for SPI
• Active Low-power
– Read current 200 µA at 1 MHz (Sin-
gle I/O, SO=0, TA=+85◦C, VDD=3.3V)
• Industrial temperature range
– -40◦C to + 85◦C
• Pb-Free and RoHS compliant
1,048,576 bit
(128K x 8)
SRAM
Array
Description
The VLSI Solution VS23S010C-S is an easy-
to-use and versatile serial SRAM device. The
memory is accessed via an SPI compatible
serial bus.
Applications
• Microcontroller RAM extension
• VoIP and internet data stream buffer
• Audio data buffer
SPI
Serial Interface
Figure 2: VS23S010C-S blocks
In SPI mode SRAM and control registers can
be accessed. Dual-I/O and Quad-I/O modes
are used only for SRAM read and write.
Following are connection examples for differ-
ent operating modes. Some I/Os of VS23S010C-
S are unconnected, because they have inter-
nal pull-up or pull-down resistors. Note also,
Version: 0.9 [Preliminary], 2015-01-16
1
1 Page VS23S010C-S Datasheet
CONTENTS
Contents
VS23S010C-S
1
Table of Contents
3
List of Figures
4
1 Disclaimer
5
2 Definitions
5
3 Electrical Characteristics & Specifications
6
3.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.3 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.3.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.3.2 SPI Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.4 Current Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.4.1 SPI Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Packages and Pin Descriptions
12
4.1 Narrow SOIC8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Connection Guidelines
13
6 Device Operation
14
6.1 SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.1.1 Word, Page and Sequential Operation Modes . . . . . . . . . . . . . 15
6.1.2 Dual-I/O and Quad-I/O Operation . . . . . . . . . . . . . . . . . . . . 17
7 SPI Commands and Addressing
20
7.1 SPI Read Commands (03h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7.1.1 Dual-Output Read (3Bh and BBh) . . . . . . . . . . . . . . . . . . . . 21
7.1.2 Quad-Output Read (6Bh and EBh) . . . . . . . . . . . . . . . . . . . 22
7.2 SPI Write Commands (02h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7.2.1 Dual-Input Write (A2h and 22h) . . . . . . . . . . . . . . . . . . . . . 25
7.2.2 Quad-Input Write (32h and B2h) . . . . . . . . . . . . . . . . . . . . . 25
7.3 SPI Miscellaneous Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.1 Read Status Register (05h) . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.2 Write Status Register (01h) . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.3 Read Manufacturer and Device ID (9Fh) . . . . . . . . . . . . . . . . 29
8 Known Issues
30
8.1 Powering Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8.2 Idle Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9 Document Version Changes
31
10 Contact Information
32
Version: 0.9 [Preliminary], 2015-01-16
3
3Pages VS23S010C-S Datasheet
3 ELECTRICAL CHARACTERISTICS & SPECIFICATIONS
3 Electrical Characteristics & Specifications
3.1 Absolute Maximum Ratings
Parameter
Symbol Min Max Unit
Positive Supply
Current at any non-power pin1
Voltage at any digital input
Operating temperature
Storage temperature
ESD protection on any pin3
VDD
-0.3 3.6 V
±50 mA
-0.3 VDD+0.32 V
-40 +85 ◦C
-65 +150 ◦C
2.0 kV
1 Higher current can cause latch-up.
2 Must not exceed 3.6 V
3 Human Body Model (HBM) MIL-STD-883E Method 3015.7
3.2 DC Characteristics
TA = -40 ... +85 ◦C
Parameter
Positive supply voltage
High-level input voltage
Low-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
I/O leakage current 2
Pull-up current
I/O capacitance 4
RAM data retention voltage 3,4
Start-up time after power-up 5
Min
1.5
0.7×VDD
-0.2
-0.2
0.7×VDD
-1.0
-5.0
Typ
0.6
(TBD)
Max
3.6
VDD+0.31
0.3×VDD
0.25×VDD
0.3×VDD
1.0
-1.1
(TBD)
1.0
(TBD) 4
Unit
V
V
V
V
V
V
µA
µA
pF
V
ms
Test Conditions
Any Schmitt-trigger pin
IO = -1.0 mA
IO = 1.0 mA
Pin as input or High-Z
Any pull-up pin
VDD=0V, f=0.5MHz, TA=+25 ◦C
1 Must not exceed 3.6V
2 Excluding the pins with pull-up or pull-down resistors
3 This is the limit to which VDD can be lowered without losing RAM data.
4 This parameter is periodically sampled and is not 100% tested.
5 Refer to Chapter 8.1 for additional information.
Version: 0.9 [Preliminary], 2015-01-16
6
6 Page | |||
ページ | 合計 : 30 ページ | ||
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部品番号 | 部品説明 | メーカ |
VS23S010C-S | 1 Megabit SPI SRAM | VLSI |