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Número de pieza | 1SS424 | |
Descripción | Silicon Epitaxial Planar Type Diode | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS424 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS424
High-Speed Switching Applications
z Low forward voltage
: VF (3) = 0.50 V (typ.)
1SS424
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
30 V
Reverse voltage
VR 20 V
Maximum (peak) forward current IFM 300 mA
Average forward current
Surge current (10 ms)
Power dissipation
IO
IFSM
P*
200 mA
1A
150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr −40 to 100 °C JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 5 mA
― IF = 200 mA
― VR = 10 V
― VR = 20 V
― VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
― 0.42 0.5
V
― ― 30
μA
― ― 50
― 20 ― pF
Equivalent Circuit (Top View)
Marking
S8
Start of commercial production
2004-08
1 2014-03-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS424.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS420 | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS420CT | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS421 | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS422 | High speed Switching Diode | Galaxy Semi-Conductor |
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