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2SK3060 の電気的特性と機能

2SK3060のメーカーはNECです、この部品の機能は「N-CHANNEL POWER MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK3060
部品説明 N-CHANNEL POWER MOS FET
メーカ NEC
ロゴ NEC ロゴ 




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2SK3060 Datasheet, 2SK3060 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3060 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 13 mMAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 20 mMAX. (VGS = 4.0 V, ID = 35 A)
Low Ciss: Ciss = 2400 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3060
TO-220AB
2SK3060-S
TO-262
2SK3060-ZJ
2SK3060-Z
TO-263
TO-220SMDNote
Note This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, 10
±70
±210
70
1.5
150
–55 to +150
35
122.5
V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-220AB)
(TO-262)
Notes 1. PW 10 µs, Duty cycle 1%
5 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13099EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1997,2000

1 Page





2SK3060 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK3060
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
5 FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RIDDS(D(oCn))=L7im0itAed(@VGSD=C1D0iVss)ip1a0t0ioIDmn1(sL0piummlsistee)1d=2m1s010A0
PW
µs
=
10
µs
1.0
TC = 25˚C
0.1 Single Pulse
0.1 1.0
10
VDS - Drain to Source Voltage - V
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
10000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
1
Rth(ch-A)= 83.3 ˚C/W
Rth(ch-C)= 1.79 ˚C/W
0.1
0.01
10µ
100µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10 100 1000
Data Sheet D13099EJ3V0DS
3


3Pages


2SK3060 電子部品, 半導体
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 35 A
10 EAS = 122.5 mJ
1.0
RG = 25
VDD = 30 V
VGS = 20 V 0 V
0.1 Starting Tch = 25 °C
10 µ 100 µ
1m
L - Inductive Load - H
10 m
2SK3060
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 30 V
140
RG = 25
VGS = 20 V 0 V
120 IAS 35 A
100
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6 Data Sheet D13099EJ3V0DS

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


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