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TC74HC279AF の電気的特性と機能

TC74HC279AFのメーカーはToshibaです、この部品の機能は「CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC」です。


製品の詳細 ( Datasheet PDF )

部品番号 TC74HC279AF
部品説明 CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
メーカ Toshiba
ロゴ Toshiba ロゴ 




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TC74HC279AF Datasheet, TC74HC279AF PDF,ピン配置, 機能
TC74HC279AP/AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC279AP, TC74HC279AF
Quad S -R Latch
The TC74HC279A is a high speed CMOS QUAD S-R LATCH
fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
Each latch has an independent Q output and Set and Reset
inputs. S and R are active low. When S input is low, the Q
output goes high and when R input is low, the Q output goes
low. When both S and R are low, S takes precedence
resulting Q = low. When both of S and R are held high, Q
output doesn’t change.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: tpd = 12 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
Balanced propagation delays: tpLH ∼− tpHL
Wide operating voltage range: VCC (opr) = 2 to 6 V
Pin and function compatible with 74LS279
Pin Assignment
TC74HC279AP
TC74HC279AF
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Start of commercial production
1988-05
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TC74HC279AF pdf, ピン配列
Absolute Maximum Ratings (Note 1)
TC74HC279AP/AF
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
0.5 to 7
0.5 to VCC + 0.5
0.5 to VCC + 0.5
±20
±20
±25
±50
500 (DIP) (Note 2)/180 (SOP)
65 to 150
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of 10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
VCC
VIN
VOUT
Topr
tr, tf
2 to 6
0 to VCC
0 to VCC
40 to 85
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
0 to 400 (VCC = 6.0 V)
V
V
V
°C
ns
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
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3Pages


TC74HC279AF 電子部品, 半導体
Package Dimensions
TC74HC279AP/AF
Weight: 1.00 g (typ.)
6 2014-03-01

6 Page



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共有リンク

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部品番号部品説明メーカ
TC74HC279AF

CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba
Toshiba
TC74HC279AP

CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba
Toshiba


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