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What is TC74HC279AP?

This electronic component, produced by the manufacturer "Toshiba", performs the same function as "CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC".


TC74HC279AP Datasheet PDF - Toshiba

Part Number TC74HC279AP
Description CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Manufacturers Toshiba 
Logo Toshiba Logo 


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TC74HC279AP/AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC279AP, TC74HC279AF
Quad S -R Latch
The TC74HC279A is a high speed CMOS QUAD S-R LATCH
fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
Each latch has an independent Q output and Set and Reset
inputs. S and R are active low. When S input is low, the Q
output goes high and when R input is low, the Q output goes
low. When both S and R are low, S takes precedence
resulting Q = low. When both of S and R are held high, Q
output doesn’t change.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: tpd = 12 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
Balanced propagation delays: tpLH ∼− tpHL
Wide operating voltage range: VCC (opr) = 2 to 6 V
Pin and function compatible with 74LS279
Pin Assignment
TC74HC279AP
TC74HC279AF
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Start of commercial production
1988-05
1 2014-03-01

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TC74HC279AP equivalent
TC74HC279AP/AF
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Characteristics
Symbol
Output transition time
Propagation delay
time
( S1 , S2 -Q)
Propagation delay
time
( S -Q)
Propagation delay
time
( R -Q)
Input capacitance
Power dissipation
capacitance
tTLH
tTHL
tpLH
tpHL
tpLH
tpHL
tpLH
tpHL
CIN
CPD
(Note)
Test Condition
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Ta = 25°C
Min Typ. Max
30 75
8 15
7 13
45 130
15 26
13 22
38 100
12 20
10 17
42 120
14 24
12 20
5 10
⎯ ⎯ 18
Ta =
40 to 85°C
Min Max
95
19
16
165
33
28
125
25
21
150
30
26
10
⎯⎯
Unit
ns
ns
ns
ns
pF
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPDVCCfIN + ICC/4 (per circuit)
5 2014-03-01


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Featured Datasheets

Part NumberDescriptionMFRS
TC74HC279AFThe function is CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC. ToshibaToshiba
TC74HC279APThe function is CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC. ToshibaToshiba

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