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PDF RT9624F Data sheet ( Hoja de datos )
| Número de pieza | RT9624F | |
| Descripción | Single Phase Synchronous Rectified Buck MOSFET Driver | |
| Fabricantes | Richtek | |
| Logotipo |  |
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®
RT9624F
Single Phase Synchronous Rectified Buck MOSFET Driver
General Description
The RT9624F is a high frequency, synchronous rectified,
single phase MOSFET driver designed for normal MOSFET
driving applications and high performance CPU VR driving
capabilities.
The RT9624F can be supplied from 4.5V to 13.2V. The
applicable power stage VIN range is from 5V to 24V. The
IC also builds in an internal power switch to replace
external bootstrap diode.
The RT9624F can support switching frequency efficiently
up to 500kHz. The IC has both UGATE and LGATE driving
circuits for synchronous rectified DC/DC converter
applications. The shoot through protection mechanism is
designed to prevent shoot through between high-side and
low-side power MOSFETs. The RT9624F has tri-state
PWM input with shutdown function, which can force driver
to output low UGATE and LGATE signals.
The RT9624F is available in a small footprint WDFN-8L
3x3 package.
Marking Information
4P=YM
DNN
4P= : Product Code
YMDNN : Date Code
Features
Drive Two N-MOSFETs
Shoot Through Protection
Embedded Bootstrap Diode
Support High Switching Frequency
Fast Output Rising Time
Tri-State PWM Input for Output Shutdown
8-Lead WDFN Package
RoHS Compliant and Halogen Free
Applications
Core Voltage Supplies for Desktop, Motherboard CPU
High Frequency Low Profile DC/DC Converters
High Current Low Voltage DC/DC Converters
Core Voltage Supplies for GFX Card
Ordering Information
RT9624F
Package Type
QW : WDFN-8L 3x3 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
Note :
Richtek products are :
RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
Simplified Application Circuit
R1
12V
C1
PWM
Controller
RT9624F
VCC
BOOT
PWM
GND
UGATE
PHASE
LGATE
R2
CBOOT
R3
R4
C5 C6
VIN
Q1
L1
VOUT
R5
Q2
C2
C3 C4
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS9624F-01 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
1
1 page  
RT9624F
Electrical Characteristics
(VCC = 12V, TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Power Supply
Power Supply Voltage
Power Supply Current
Power On Reset (POR)
VCC
IVCC
VBOOT = 12V, PWM Input Floating
4.5 -- 13.2 V
-- 120 -- A
POR Rising Threshold
POR Falling Threshold
PWM Input
VPOR_r
VPOR_ f
VCC Rising
VCC Falling
-- 4 4.4 V
3 3.5 --
V
Maximum Input Current
PWM Floating Voltage
PWM Rising Threshold
PWM Falling Threshold
IPWM
VPWM_fl
VPWM_rth
VPWM_fth
PWM = 0V or 5V
PWM = Open
-- 160 --
-- 1.8 --
2.3 2.8 3.2
0.7 1.1 1.4
A
V
V
V
Timing
UGATE Rising Time
tUGATEr
3nF Load
-- 25 -- ns
UGATE Falling Time
tUGATEf
3nF Load
-- 12 -- ns
LGATE Rising Time
tLG ATE r
3nF Load
-- 24 -- ns
LGATE Falling Time
tLGATEf
3nF Load
-- 10 -- ns
UGATE Propagation Delay tUGATEpdh
tUGATEpdl
LGATE Propagation Delay tLGATEpdh
tLG ATE pdl
Output
VBOOT VPHASE = 12V
See Timing Diagram
See Timing Diagram
See Timing Diagram
-- 60 --
ns
-- 22 --
-- 30 --
ns
-- 8 --
UGATE Drive Source
UGATE Drive Sink
LGATE Drive Source
LGATE Drive Sink
RUGATEsr VBOOT VPHASE = 12V, ISource = 100mA -- 1.7 --
RUGATEsk VBOOT VPHASE = 12V, ISink = 100mA
-- 1.4 --
RLGATEsr
ISource = 100mA
-- 1.6 --
RLGATEsk ISink = 100mA
-- 1.1 --
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS9624F-01 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
5
5 Page 
RT9624F
BOOT
UGATE
PHASE
VCC
VIN
CBOOT
+
VCB
-
LGATE
GND
Figure 2. Part of Bootstrap Circuit of RT9624F
In practice, a low value capacitor CBOOT will lead to the
over charging that could damage the IC. Therefore, to
minimize the risk of overcharging and to reduce the ripple
on VCB, the bootstrap capacitor should not be smaller than
0.1μF, and the larger the better. In general design, using
1μF can provide better performance. At least one low-ESR
capacitor should be used to provide good local de-coupling.
It is recommended to adopt a ceramic or tantalum
capacitor.
Power Dissipation
To prevent driving the IC beyond the maximum
recommended operating junction temperature of 125°C,
it is necessary to calculate the power dissipation
appropriately. This dissipation is a function of switching
frequency and total gate charge of the selected MOSFET.
Figure 3 shows the power dissipation test circuit. CL and
CU are the UGATE and LGATE load capacitors,
respectively. The bootstrap capacitor value is 1μF.
CBOOT
1µF
12V
10
12V
1µF
PWM
BOOT
VCC UGATE
RT9624F
PHASE
PWN
LGATE
GND
2N7002
CU
3nF
2N7002
CL
3nF
20
Figure 3. Power Dissipation Test Circuit
Figure 4 shows the power dissipation of the RT9624F as
a function of frequency and load capacitance when VCC =
12V. The value of CUand CL are the same and the frequency
is varied from 100kHz to 1MHz.
Power Dissipation vs. Frequency
1000
900
800 CU = CL = 3nF
700
600
CU = CL = 2nF
500
400
300
200 CU = CL = 1nF
100
0
0
VCC = 12V
200 400 600 800 1000
Frequency (kHz)
Figure 4. Power Dissipation vs. Frequency
The operating junction temperature can be calculated from
the power dissipation curves (Figure 4). Assume
VCC = 12V, operating frequency is 200kHz and CU = CL =
1nF which emulate the input capacitances of the high-
side and low-side power MOSFETs. From Figure 4, the
power dissipation is 100mW. Thus, for example, the
package thermal resistance θJA is 120°C/W. The operating
junction temperature is then calculated as :
TJ = (120°C/W x 100mW) + 25°C = 37°C
(11)
where the ambient temperature is 25°C.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS9624F-01 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet RT9624F.PDF ] | |
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