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PDF RT9610B Data sheet ( Hoja de datos )
| Número de pieza | RT9610B | |
| Descripción | High Voltage Synchronous Rectified Buck MOSFET Driver | |
| Fabricantes | Richtek | |
| Logotipo |  |
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®
RT9610A/B
High Voltage Synchronous Rectified Buck MOSFET Driver
for Notebook Computer
General Description
The RT9610A/B is a high frequency, dual MOSFET driver
specifically designed to drive two power N-MOSFETS in
a synchronous-rectified buck converter topology. It is
especially suited for mobile computing applications that
require high efficiency and excellent thermal performance.
This driver, combined with Richtek's series of multi-phase
Buck PWM controllers, provides a complete core voltage
regulator solution for advanced microprocessors.
The drivers are capable of driving a 3nF load with fast
rising/falling time and fast propagation delay. This device
implements bootstrapping on the upper gates with only a
single external capacitor. This reduces implementation
complexity and allows the use of higher performance, cost
effective, N-MOSFETs. Adaptive shoot through protection
is integrated to prevent both MOSFETs from conducting
simultaneously.
The RT9610A/B is available in WQFN-8L 3x3 and
WDFN-8L 2x2 Packages.
Features
z Drives Two N-MOSFETs
z Adaptive Shoot-Through Protection
z 0.5Ω On-Resistance, 4A Sink Current Capability
z Supports High Switching Frequency
z Tri-State PWM Input for Power Stage Shutdown
z Output Disable Function
z Integrated Boost Switch
z Low Bias Supply Current
z VCC POR Feature Integrated
z Small 8-Lead WQFN and WDFN Packages
z RoHS Compliant and Halogen Free
Applications
z Core Voltage Supplies for Intel® / AMD® Mobile
Microprocessors
z High Frequency Low Profile DC/DC Converters
z High Current Low Output Voltage DC/DC Converters
z High Input Voltage DC/DC Converters
Simplified Application Circuit
VCC
Chip Enable
PWM
RT9610A/B
VCC UGATE
BOOT
PHASE
EN
PWM LGATE
GND
VIN
VCORE
Copyright ©2013 Richtek Technology Corporation. All rights reserved.
DS9610A/B-05 September 2013
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
1
1 page  
RT9610A/B
Absolute Maximum Ratings (Note 1)
z Supply Voltage, VCC ------------------------------------------------------------------------------------------------------- −0.3V to 6V
z BOOT to PHASE ------------------------------------------------------------------------------------------------------------ −0.3V to 6V
z PHASE to GND
DC ------------------------------------------------------------------------------------------------------------------------------- −0.3V to 32V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −8V to 38V
z UGATE to PHASE
DC ------------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −5V to 7.5V
z LGATE to GND
DC ------------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −2.5V to 7.5V
z PWM, EN to GND ---------------------------------------------------------------------------------------------------------- −0.3V to 6V
z Power Dissipation, PD @ TA = 25°C
WQFN-8L 3x3 ---------------------------------------------------------------------------------------------------------------- 1.258W
WDFN-8L 2x2 ---------------------------------------------------------------------------------------------------------------- 0.833W
z Package Thermal Resistance (Note 2)
WQFN-8L 3x3, θJA ---------------------------------------------------------------------------------------------------------- 79.5°C/W
WQFN-8L 3x3, θJC ---------------------------------------------------------------------------------------------------------- 8°C/W
WDFN-8L 2x2, θJA ----------------------------------------------------------------------------------------------------------- 120°C/W
WDFN-8L 2x2, θJC ---------------------------------------------------------------------------------------------------------- 8.2°C/W
z Junction Temperature ------------------------------------------------------------------------------------------------------- 150°C
z Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------------------- 260°C
z Storage Temperature Range ---------------------------------------------------------------------------------------------- −65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Model) ------------------------------------------------------------------------------------------------ 2kV
Recommended Operating Conditions (Note 4)
z Input Voltage, VIN ----------------------------------------------------------------------------------------------------------- 4.5V to 26V
z Control Voltage, VCC ------------------------------------------------------------------------------------------------------- 4.5V to 5.5V
z Ambient Temperature Range ---------------------------------------------------------------------------------------------- −40°C to 85°C
z Junction Temperature Range ---------------------------------------------------------------------------------------------- −40°C to 125°C
Electrical Characteristics
(VCC = 5V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
VCC Supply Current
Quiescent Current
Shutdown Current
IQ
IS HDN
VPORH
VCC Power On Reset (POR) VPORL
PWM Pin Floating, VEN = 3.3V
VEN = 0V, PWM = 0V, VCC = 5V
VCC POR Rising
VCC POR Falling
VPORHYS Hysteresis
Min Typ Max Unit
-- 80 --
-- 0 5
-- 4.2 4.5
3.5 3.84 --
-- 360 --
μA
μA
V
V
mV
Copyright ©2013 Richtek Technology Corporation. All rights reserved.
DS9610A/B-05 September 2013
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
5
5 Page 
Application Information
Supply Voltage and Power On Reset
The RT9610A/B is designed to drive both high side and
low side N-MOSFETs through an externally input PWM
control signal. Connect 5V to VCC to power on the
RT9610A/B. A minimum 1μF ceramic capacitor is
recommended to bypass the supply voltage. Place the
bypassing capacitor physically near the IC. The power on
reset (POR) circuit monitors the supply voltage at the
VCC pin. If VCC exceeds the POR rising threshold voltage,
the controller resets and prepares for operation. UGATE
and LGATE are held low before VCC is above the POR
rising threshold.
Enable and Disable
The RT9610A/B includes an EN pin for sequence control.
When the EN pin rises above the VENH trip point, the
RT9610A/B begins a new initialization and follows the
PWM command to control the UGATE and LGATE. When
the EN pin falls below the VENL trip point, the RT9610A/B
shuts down and keeps UGATE and LGATE low.
Three State PWM Input
After initialization, the PWM signal takes over the control.
The rising PWM signal first forces the LGATE signal low
and then allows the UGATE signal to go high right after a
non-overlapping time to avoid shoot through current. In
contrast, the falling PWM signal first forces UGATE to go
low. When the UGATE or PHASE signal reach a
predetermined low level, LGATE signal is then allowed to
go high.
Non-overlap Control
To prevent the overlap of the gate drives during the UGATE
pull low and the LGATE pull high, the non-overlap circuit
monitors the voltages at the PHASE node and high side
gate drive (UGATE-PHASE). When the PWM input signal
goes low, UGATE begins to pull low (after propagation
delay). Before LGATE can pull high, the non-overlap
protection circuit ensures that the monitored (UGATE-
PHASE) voltages have gone below 1.1V or phase voltage
is below 2V. Once the monitored voltages fall below the
threshold, LGATE begins to turn high. By waiting for the
RT9610A/B
voltages of the PHASE pin and high side gate drive to fall
below their threshold, the non-overlap protection circuit
ensures that UGATE is low before LGATE pulls high.
Also to prevent the overlap of the gate drives during LGATE
pull low and UGATE pull high, the non-overlap circuit
monitors the LGATE voltage. When LGATE go below 1.1V,
UGATE is allowed to go high.
Driving Power MOSFETs
The DC input impedance of the power MOSFET is
extremely high. The gate draws the current only for few
nano-amperes. Thus once the gate has been driven up to
“ON” level, the current could be negligible.
However, the capacitance at the gate to source terminal
should be considered. It requires relatively large currents
to drive the gate up and down rapidly. It is also required to
switch drain current on and off with the required speed.
The required gate drive currents are calculated as follows.
d1
VIN
Cgd1
D1
s1
Cgs1
L
VOUT
Igd1 Igs1
Ig1
g1 g2
Ig2 Igd2
Igs2
Cgd2
d2
D2
Cgs2 s2
Vg1
VPHASE +5V
GND
Vg2 5V
t
t
Figure1. Equivalent Circuit and Associated Waveforms
Copyright ©2013 Richtek Technology Corporation. All rights reserved.
DS9610A/B-05 September 2013
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
11
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet RT9610B.PDF ] | |
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