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10N60NZ の電気的特性と機能

10N60NZのメーカーはFairchild Semiconductorです、この部品の機能は「FDP10N60NZ」です。


製品の詳細 ( Datasheet PDF )

部品番号 10N60NZ
部品説明 FDP10N60NZ
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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10N60NZ Datasheet, 10N60NZ PDF,ピン配置, 機能
FDP10N60NZ / FDPF10N60NZ
N-Channel UniFETTM II MOSFET
600 V, 10 A, 750 mΩ
November 2013
Features
• RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 23 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/ LED/ PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS
TO-220
G
GDS TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Dran current limited by maximum junction temperature.
S
FDP10N60NZ FDPF10N60NZ
600
±25
10 10*
6 6*
40 40*
550
10
18.5
10
185 38
1.5 0.3
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP10N60NZ
0.68
62.5
FDPF10N60NZ
3.3
62.5
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
1
www.fairchildsemi.com

1 Page





10N60NZ pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30
VGS = 15.0V
10.0V
8.0V
7.0V
10 6.0V
5.5V
1
0.5
0.5
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
5 10 15
ID, Drain Current [A]
20
Figure 5. Capacitance Characteristics
4000
1000
Ciss
Coss
100
Crss
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
*Note:
1. VGS = 0V
Crss = Cgd
2. f = 1MHz
1
10-1
1
10 30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
150oC
25oC
-55oC
1
0.1
2
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
468
VGS, Gate-Source Voltage[V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10
150oC
25oC
1
0.1
0.2
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
10
8 VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 10A
0
0 5 10 15 20 25
Qg, Total Gate Charge [nC]
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
3
www.fairchildsemi.com


3Pages


10N60NZ 電子部品, 半導体
IG = const.
Figure 14. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 15. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
10N60NZ

FDP10N60NZ

Fairchild Semiconductor
Fairchild Semiconductor


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