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Datasheet 2SA1162 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1162 | PNP Transistor FEATURES
Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package.
Plastic-Encapsulate Transistors
2SA1162(PNP)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junc |  HOTTECH | transistor |
| 2 | 2SA1162 | Silicon PNP Epitaxial Type Transistor 2SA1162
Silicon PNP Epitaxial Type Transistor
Features • High voltage and high current: VCEO = -50 V, IC = 150 mA (max) • Low noise: NF = 1dB (typ.), 10dB (max) • Small package • RoHS compliant package Mechanical Data • Case: Molded plastic • Epoxy: UL94-V0 rate flame retardant Packing & |  Bruckewell | transistor |
| 3 | 2SA1162 | Silicon PNP transistor 2SA1162
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
电压和集电极直流电流大,极好的放大线性,高放大,噪声系数低,与 2SC2712 互补。 High voltage and |  BLUE ROCKET ELECTRONICS | transistor |
| 4 | 2SA1162 | PNP EPITAXIAL SILICON TRANSISTOR RoHS
2SA1162
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQRENCY,LOW NOISE AMPLIFIER
DComplemen to 2SC2712
Collector-current:Ic=-100mA
.,LTCollector-Emiller Voltage:VCE=-45V
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
OUnit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacterist |  WEJ | transistor |
| 5 | 2SA1162 | Silicon PNP Epitaxial Type Transistor 2SA1162
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.) • High hFE |  Toshiba Semiconductor | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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