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PDF AP6942GMT-HF Data sheet ( Hoja de datos )
| Número de pieza | AP6942GMT-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6942GMT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 D1 D2 D2
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
N-CH
P-CH
Description
S1 G1 S2 G2
AP6942 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
9mΩ
15.8A
-20V
23mΩ
-10.1A
D1
D1
D2
D2
The PMPAK ® 5x6 package is special for voltage conversion
S1
application using standard infrared reflow technique with the
G1
backside heat sink to achieve the good thermal performance.
S2
G2 PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -20 V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Gate-Source Voltage
Drain Current3
Drain Current3
Pulsed Drain Current1
+20
15.8
12.6
60
+12
-10.1
-8.1
40
V
A
A
A
PD@TA=25℃
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3.57
-55 to 150
-55 to 150
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Rating
N-channel P-channel
7.2 6
35 35
Data and specifications subject to change without notice
Units
℃/W
℃/W
1
201501062
1 page  
N-Channel
10
I D = 12 A
V DS = 10 V
8
6
4
2
0
0 6 12 18 24 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1
0.1
T A =25 o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
60
V DS =5V
50
40
30
20
T j =150 o C
10 T j =25 o C
T j = -40 o C
0
012345
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
AP6942GMT-HF
2000
1800
1600
1400
1200
1000
800
600
400
200
0
1
f=1.0MHz
C iss
C oss
C rss
5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 85℃/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
20
16
12
8
4
0
25 50 75 100 125 150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP6942GMT-HF.PDF ] | |
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