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AP6680BGMT の電気的特性と機能

AP6680BGMTのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP6680BGMT
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP6680BGMT Datasheet, AP6680BGMT PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP6680BGMT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
D
Low On-resistance
RoHS Compliant & Halogen-Free
G
Description
S
AP6680B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID
30V
9mΩ
41.4A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
.
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
41.4
18.5
14.8
100
25
5
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
25
Unit
/W
/W
1
201407071

1 Page





AP6680BGMT pdf, ピン配列
AP6680BGMT
100
10V~9.0V
8.0V
T C =25 o C
80 7.0V
6.0V
5.0V
60 V G = 4.0V
40
20
0
0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
10V
50
40
30
20
9.0V
8.0V
7.0V
6.0V
5.0V
V G = 4.0V
T C = 150 o C
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
14
I D = 12 A
T C =25 o C
12
.10
8
6
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
1.8
I D =20A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =250uA
1.6
150
1.2
0.8
0.4
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.0
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


3Pages


AP6680BGMT 電子部品, 半導体
AP6680BGMT
MARKING INFORMATION
6680BGMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
6

6 Page



ページ 合計 : 6 ページ
 
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ダウンロード
[ AP6680BGMT データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
AP6680BGM-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP6680BGM-HF-3

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP6680BGMT

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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