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AP6680BGMTのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP6680BGMT |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP6680BGMTダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Advanced Power
Electronics Corp.
AP6680BGMT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
D
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP6680B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID
30V
9mΩ
41.4A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
.
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
41.4
18.5
14.8
100
25
5
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
25
Unit
℃/W
℃/W
1
201407071
1 Page AP6680BGMT
100
10V~9.0V
8.0V
T C =25 o C
80 7.0V
6.0V
5.0V
60 V G = 4.0V
40
20
0
0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
10V
50
40
30
20
9.0V
8.0V
7.0V
6.0V
5.0V
V G = 4.0V
T C = 150 o C
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
14
I D = 12 A
T C =25 o C
12
.10
8
6
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
1.8
I D =20A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =250uA
1.6
150
1.2
0.8
0.4
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.0
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
3Pages AP6680BGMT
MARKING INFORMATION
6680BGMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ AP6680BGMT データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP6680BGM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP6680BGM-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP6680BGMT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |