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PDF AP4511GED Data sheet ( Hoja de datos )
| Número de pieza | AP4511GED | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4511GED
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
40V
28mΩ
6A
-40V
42mΩ
-5A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
40 -40
±16 ±16
6.0 -5.0
5.0 -4.0
30 -30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200725064-1/7
1 page  
N-Channel
12
I D =6A
V DS =20V
8
4
AP4511GED
f=1.0MHz
1000
C iss
C100
oss
C rss
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1
0.1 T A =25 o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V DS =5V
T j =25 o C T j =150 o C
20
10
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10 100
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
Charge
Q
Fig 12. Gate Charge Waveform
5/7
5 Page | ||
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