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AP4509AGM-HF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 AP4509AGM-HF
部品説明 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 



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AP4509AGM-HF Datasheet, AP4509AGM-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP4509AGM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4509A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
30V
10mΩ
11.2A
-30V
21mΩ
-8A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20 +20
11.2 -8.0
9.0 -6.4
40 -30
2
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501072

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AP4509AGM-HF

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
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