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AP4503BGM-HF の電気的特性と機能

AP4503BGM-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP4503BGM-HF
部品説明 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP4503BGM-HF Datasheet, AP4503BGM-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP4503BGM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Performance
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4503B series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
30V
18mΩ
8.2A
-30V
29mΩ
-6.6A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS
ID@TA=25
ID@TA=70
IDM
Gate-Source Voltage
Drain Current3 , VGS @ 10V
Drain Current3 , VGS @ 10V
Pulsed Drain Current1
+20 +20
8.2 -6.6
6.6 -5.3
30 -30
V
A
A
A
PD@TA=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501053

1 Page





AP4503BGM-HF pdf, ピン配列
AP4503BGM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
VGS=0V, ID=-250uA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-6A
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
ID=-6A
-30 -
-
- - 29
- - 45
-1 - -3
- 14 -
- - -1
- - +100
- 12 19.2
Qgs Gate-Source Charge
VDS=-15V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-15V
-3-
- 6.3 -
- 10.5 -
tr Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf Fall Time
VGS=-10V
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
f=1.0MHz
- 6.5 -
- 32 -
- 17 -
- 965 1540
- 165 -
- 145 -
-6-
Units
V
m
m
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 23 - ns
- 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3


3Pages


AP4503BGM-HF 電子部品, 半導体
AP4503BGM-HF
P-Channel
40
T A =25 o C
30
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
20
10
0
0123456
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
I D = -4 A
T A =25 o C
40
30
20
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
5
4
T j =150 o C
T j =25 o C
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
40
T A = 150 o C
30
20
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
10
0
012345
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D = -6 A
V G = - 10V
1.4
1.2
1.0
0.8
30
-30
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6

6 Page



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共有リンク

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部品番号部品説明メーカ
AP4503BGM-HF

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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