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AP4500GM-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP4500GM-HF |
| |
部品説明 | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP4500GM-HFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Advanced Power
Electronics Corp.
AP4500GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4500 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G1
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
20 -20 V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Gate-Source Voltage
Drain Current, VGS @ 4.5V3
Drain Current, VGS @ 4.5V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+12 +12
6 -5
4.8 -4
20 -20
2.0
0.016
V
A
A
A
W
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501087
1 Page AP4500GM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-4.5V, ID=-2.2A
VGS=-2.5V, ID=-1.8A
-20 -
--
--
-V
50 mΩ
90 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5 -
-1 V
gfs
Forward Transconductance
VDS=-10V, ID=-2.2A
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V
IGSS Gate-Source Leakage
VGS=+12V, VDS=0V
Qg Total Gate Charge
ID=-5A
Qgs Gate-Source Charge
VDS=-16V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time
VDS=-10V
tr Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
tf Fall Time
RD=10Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-20V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 2.2 -
S
- - -1 uA
- - -25 uA
- - +100 nA
- 13 20 nC
- 1.5 - nC
- 4.5 - nC
- 8 - ns
- 17 - ns
- 24 - ns
- 36 - ns
- 920 1500 pF
- 90 - pF
- 85 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.8A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max.
- - -1.2
- 28 -
- 16 -
30
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
3Pages AP4500GM-HF
P-Channel
20
16
12
T A =25 o C
- 5.0 V
- 4.5 V
- 3.5 V
- 2.5 V
V G = - 1.5 V
8
4
0
012345
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D = -1.8 A
T A =25 o C
56
52
48
44
40
1234
-V GS , Gate-to-Source Voltage (V)
5
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T j =150 o C
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
20
T A = 150 o C -5.0 V
- 4.5 V
16 - 3.5 V
- 2.5 V
12
V G = - 1.5 V
8
4
0
01234
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.4
I D = -2.2 A
V G = - 10V
1.2
1.0
0.8
30
-30
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.2
1.0
0.8
0.6
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
AP4500GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |