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AP4439GMT-HF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 AP4439GMT-HF
部品説明 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 



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AP4439GMT-HF Datasheet, AP4439GMT-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP4439GMT-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
SO-8 Compatible
D
Lower Gate Charge
RoHS Compliant & Halogen-Free
G
S
Description
AP4439 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The PMPAK® 5x6 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
BVDSS
RDS(ON)
ID
-30V
10mΩ
-58A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-30
+25
-58
-18.5
-14.8
-200
50
5
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
2.5
25
Unit
/W
/W
1
201409102AP

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AP4439GMT-HF

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics

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