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PDF AP6982GM Data sheet ( Hoja de datos )
| Número de pieza | AP6982GM | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6982GM
Pb Free Plating Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ Surface Mount Package
D2
D2
D2
D1 D2
D1 D1
D1
Description
SO-8
SO-8
G2
G2
S2
G1 S2
S1S1 G1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
CH-1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
30V
18mΩ
8.5A
30V
26mΩ
7.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
CH-1
CH2
30 30
±25 ±25
8.5 7.3
6.8 5.8
30 30
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
201220042
1 page  
Channel-1
14
12 I D = 8 A
10 V DS =16V
V DS =20V
8 V DS =24V
6
4
2
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
1
0.1 T A =25 o C
Single Pulse
10ms
100ms
1s
10s
DC
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
40
V DS =5V
30 T j =25 o C
T j =150 o C
20
10
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
AP6982GM
f=1.0MHz
10000
C1000 iss
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP6982GM.PDF ] | |
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