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PDF AP6950GMT-HF Data sheet ( Hoja de datos )
| Número de pieza | AP6950GMT-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6950GMT-HF
Halogen-Free Product
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
▼ Simple Drive Requirement
D1 CH-1 BVDSS
30V
▼ Easy for Synchronous Buck
Converter Application
▼ RoHS Compliant & Halogen-Free
G1
Description
G2
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
Absolute Maximum Ratings
D2/S1
CH-2
S2
RDS(ON)
ID
BVDSS
RDS(ON)
ID
G2 S2 S2 S2
S1/D2
16mΩ
21.6A
30V
8.5mΩ
42.4A
G2
S2
S2
S2
D1
G1 D1 D1 D1
G1
D1
D1
D1
PMPAK® 5x6
Symbol
Parameter
Rating
Units
CH-1
CH-2
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current5 (Chip Limited)
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30 30
+20 +20
21.6 42.4
10.8 16.8
8.6 13.4
40 60
3.13 3.9
-55 to 150
-55 to 150
V
V
A
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Maximum Thermal Resistance, Junction-ambient4
Data & specifications subject to change without notice
Rating
CH-1
CH-2
10 5
40 32
70 60
Units
℃/W
℃/W
℃/W
1
201209041
1 page  
AP6950GMT-HF
Channel-1
10
I D =10A
V DS =15V
8
6
4
2
0
0 2 4 6 8 10
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this
area limited by
RDS(ON)
10
100us
1ms
1 10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
0.01
0.01
0.1 1 10
V DS ,Drain-to-Source Voltage (V)
DC
100
Fig 9. Maximum Safe Operating Area
40
30
20
10
0
25 50 75 100 125 150
T C , Case Temperature ( o C )
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
f=1.0MHz
600
500
C iss
400
300
200
100
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=70oC/W
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP6950GMT-HF.PDF ] | |
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