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PDF AP6950GYT-HF Data sheet ( Hoja de datos )
| Número de pieza | AP6950GYT-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6950GYT-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1 CH-1 BVDSS
30V
▼ Easy for Synchronous Buck
Converter Application
▼ RoHS Compliant & Halogen-Free
G1
Description
G2
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low on-
resistance and cost-effectiveness.
RDS(ON)
D2/S1
ID
CH-2 BVDSS
RDS(ON)
IS2 D
G2 S2 S2 S2
S1/D2
18mΩ
21A
30V
10.5mΩ
39A
G2
S2
S2
S2
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
D1
G1 D1 D1 D1
G1
D1
D1
D1
PMPAK® 3 x 3
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
CH-1
CH-2
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip Limited)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
30 30
+20 +12
21 39
8.3 11.8
6.6 9.5
40 40
1.9 2.2
-55 to 150
-55 to 150
V
V
A
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Maximum Thermal Resistance, Junction-ambient4
Data & specifications subject to change without notice
Rating
CH-1
CH-2
10 5
65 55
180 145
Units
℃/W
℃/W
℃/W
1
201501296
1 page  
AP6950GYT-HF
Channel-1
10
I D =8A
V DS =15V
8
6
4
2
0
02468
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
600
500
C iss
400
300
200
C100
oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
RDS(ON)
10
100us
1ms
1
10ms
0.1
0.01
0.01
T A =25 o C
Single Pulse
0.1 1 10
V DS ,Drain-to-Source Voltage (V)
100ms
1s
DC
100
Fig 9. Maximum Safe Operating Area
1
Duty factor = 0.5
0.2
0.1 0.1
0.05
. 0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=180oC/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
40
V DS =5V
30
20
10
T j =150 o C
T j =25 o C
T j =-40 o C
0
012345
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page | ||
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| PDF Descargar | [ Datasheet AP6950GYT-HF.PDF ] | |
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