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PDF FNB43060T2 Data sheet ( Hoja de datos )
| Número de pieza | FNB43060T2 | |
| Descripción | Motion SPM 45 module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FNB43060T2
Motion SPM® 45 Series
March 2016
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Built-In NTC Thermistor for Temperature Monitoring
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2000 Vrms / min.
General Description
FNB43060T2 is an advanced Motion SPM® 45 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive
of the built-in IGBTs to minimize EMI and losses, while
also providing multiple on-module protection features
including under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9084 - Smart Power Module, Motion SPM® 45 H
V3 Series User’s Guilde
• AN-9072 - Smart Power Module Motion SPM® in
SPM45H Thermal Performance Information
• AN-9071 - Smart Power Module Motion SPM® in
SPM45H Mounting Guidance
• AN-9760 - PCB Design Guidance for SPM®
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNB43060T2
Device Marking
FNB43060T2
Package
SPMAB-C26
Packing Type
Rail
Quantity
12
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
1
www.fairchildsemi.com
1 page  
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ ＜ 150°C
TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4)
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per One Chip (Note 4)
Rating
450
500
600
30
60
59
- 40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VDD Control Supply Voltage
VBS High - Side Control Bias Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current-Sensing Input Voltage
Conditions
Rating
Applied between VDD(H), VDD(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
20
20
-0.3 ~ VDD + 0.3
-0.3 ~ VDD + 0.3
1
-0.3 ~ VDD+ 0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ Operating Junction Temperature
Conditions
TC = 25°C, TJ ＜ 150°C
TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2000
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module)
(Note 5)
Inverter FWDi Part (per 1 / 6 module)
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
2.1
2.8
Unit
°C / W
°C / W
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
5
www.fairchildsemi.com
5 Page 
Time Charts of Protective Function
Input Signal
Protection
Circuit State
Control
Supply Voltage
RESET
SET
UVDDR
a1
UVDDD
a2
a3
a4
RESET
a6
a7
Output Current
Fault Output Signal
a5
Figure 11. Under-Voltage Protection (Low-Side)
a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVDDD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts with a fixed pulse width.
a6 : Under voltage reset (UVDDR).
a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Input Signal
Protection
Circuit State
Control
Supply Voltage
RESET
UVBSR
b1
UVBSD
b2
SET
b3
b4
RESET
b5
b6
Output Current
High-level (no fault output)
Fault Output Signal
Figure 12. Under-Voltage Protection (High-Side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
11
www.fairchildsemi.com
11 Page | ||
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