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FNB33060T の電気的特性と機能

FNB33060TのメーカーはFairchild Semiconductorです、この部品の機能は「Motion SPM 3 module」です。


製品の詳細 ( Datasheet PDF )

部品番号 FNB33060T
部品説明 Motion SPM 3 module
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FNB33060T Datasheet, FNB33060T PDF,ピン配置, 機能
March 2016
FNB33060T
Motion SPM® 3 Series
Features
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
General Description
FNB33060T is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
AN-9088 - Motion SPM® 3 V6 Series Users Guide
• AN-9086 - SPM 3 Package Mounting Guide
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNB33060T
Device Marking
FNB33060T
Package
SPM27-RA
Packing Type
Rail
Quantity
10
©2016 Fairchild Semiconductor Corporation
FNB33060T Rev. 1.1
1
www.fairchildsemi.com

1 Page





FNB33060T pdf, ピン配列
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
VDD(L)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
VTS
CSC
IN(UH)
VDD(H)
VB(U)
VS(U)
IN(VH)
VDD(H)
VB(V)
VS(V)
IN(WH)
VDD(H)
VB(W)
VS(W)
NU
NV
NW
U
V
W
P
Pin Description
Low-Side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Signal Input for Low-Side U-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side W-Phase
Fault Output
Output for LVIC Temperature Sensing Voltage Output
Shut Down Input for Short-Circuit Current Detection Input
Signal Input for High-Side U-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for U-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
Signal Input for High-Side V-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-Side W-Phase
High-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for W-Phase IGBT Driving
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Output for U-Phase
Output for V-Phase
Output for W-Phase
Positive DC-Link Input
©2016 Fairchild Semiconductor Corporation
FNB33060T Rev. 1.1
3
www.fairchildsemi.com


3Pages


FNB33060T 電子部品, 半導体
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
VCE(SAT)
VF
HS tON
tC(ON)
tOFF
tC(OFF)
trr
LS tON
tC(ON)
tOFF
tC(OFF)
trr
ICES
Collector - Emitter Saturation VDD = VBS = 15 V
Voltage
VIN = 5 V
IC = 30 A, TJ = 25°C
FWDi Forward Voltage
VIN = 0 V
IF = 30 A, TJ = 25°C
Switching Times
VPN = 300 V, VDD = 15 V, IC = 30 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
See Figure 5
(Note 6)
VPN = 300 V, VDD = 15 V, IC = 30 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
See Figure 5
(Note 6)
Collector - Emitter Leakage VCE = VCES
Current
Min.
-
-
0.50
-
-
-
-
0.40
-
-
-
-
-
Typ. Max. Unit
1.6 2.2
V
2.0 2.6
V
0.90 1.40
s
0.20 0.60
s
0.85 1.35
s
0.15 0.45
s
0.08 -
s
0.80 1.30
s
0.25 0.60
s
0.90 1.40
s
0.15 0.45
s
0.10 -
s
- 5 mA
Note:
6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
100% IC 100% IC
trr
VCE
IC
IC VCE
VIN VIN
V IN (O N )
tON
10% IC
tC(ON)
90% IC 10% VCE
(a) turn-on
tOFF
V IN (O F F)
tC(OFF)
10% VCE
10% IC
(b) turn-off
Figure 4. Switching Time Definition
©2016 Fairchild Semiconductor Corporation
FNB33060T Rev. 1.1
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FNB33060T

Motion SPM 3 module

Fairchild Semiconductor
Fairchild Semiconductor


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