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FNA51560TD3 の電気的特性と機能

FNA51560TD3のメーカーはFairchild Semiconductorです、この部品の機能は「Motion SPM 55 module」です。


製品の詳細 ( Datasheet PDF )

部品番号 FNA51560TD3
部品説明 Motion SPM 55 module
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FNA51560TD3 Datasheet, FNA51560TD3 PDF,ピン配置, 機能
FNA51560TD3
Motion SPM® 55 Series
July 2015
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 15 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes in HVIC
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-HIGH interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Cir-
cuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Cur-
rent Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Optimized for 5 kHz Switching Frequency
• Isolation Rating: 1500 Vrms / min.
General Description
FNA51560TD3 is a Motion SPM 55 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust short-
circuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9096 - Smart Power Module, Motion SPM® 55
Series User’s Guide
• AN-9097 - SPM® 55 Packing Mounting Guidance
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNA51560TD3
Device Marking
FNA51560TD3
Package
SPMFA-B20
Packing Type
RAIL
Quantity
13
©2015 Fairchild Semiconductor Corporation
FNA51560TD3 Rev. 1.0
1
www.fairchildsemi.com

1 Page





FNA51560TD3 pdf, ピン配列
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Pin Name
P
U, VS(U)
V, VS(V)
W, VS(W)
NU
NV
NW
IN(UL)
IN(UH)
IN(VL)
IN(VH)
IN(WL)
IN(WH)
VDD
COM
CSC
VF
VB(W)
VB(V)
VB(U)
Pin Description
Positive DC-Link Input
Output for U Phase
Output for V Phase
Output for W Phase
Negative DC-Link Input for U Phase
Negative DC-Link Input for V Phase
Negative DC-Link Input for W Phase
Signal Input for Low-Side U Phase
Signal Input for High- ide U Phase
Signal Input for Low-Side V Phase
Signal Input for High-Side V Phase
Signal Input for Low-Side W Phase
Signal Input for High-Side W Phase
Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
Fault Output, Shut-Down Input, Temperature Output of Drive IC
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage for U-Phase IGBT Driving
©2015 Fairchild Semiconductor Corporation
FNA51560TD3 Rev. 1.0
3
www.fairchildsemi.com


3Pages


FNA51560TD3 電子部品, 半導体
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VCE(SAT)
VF
HS tON
tC(ON)
tOFF
tC(OFF)
trr
LS tON
tC(ON)
tOFF
tC(OFF)
trr
ICES
Collector - Emitter Saturation VDD = VBS = 15 V
Voltage
VIN = 5 V
IC = 15 A
TJ = 25°C
TJ = 150°C
FWDi Forward Voltage
VIN = 0 V
IF = 15 A
TJ = 25°C
TJ = 150°C
Switching Times
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
VIN = 0 V 5 V, Inductive load
(Note 8)
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
VIN = 0 V 5 V, Inductive load
(Note 8)
Collector - Emitter Leakage VCE = VCES
Current
Min. Typ. Max. Unit
-
1.45 1.85
V
- 1.65 -
V
-
1.7 2.1
V
- 1.7 -
V
0.55 0.80 1.05
us
-
0.15 0.35
us
-
0.55 0.85
us
-
0.15 0.30
us
- 0.08 -
us
0.55 0.80 1.05
us
-
0.25 0.45
us
-
0.55 0.85
us
-
0.15 0.30
us
- 0.08 -
us
- - 1 mA
Note:
8. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% IC 100% IC
trr
VCE
IC
IC VCE
V IN
V IN (O N )
tON
10% IC
tC(ON)
90% IC 10% VCE
(a) turn-on
V IN
tOFF
V IN (O F F)
tC(OFF)
10% VCE
10% IC
(b) turn-off
Figure 4. Switching Time Definition
©2015 Fairchild Semiconductor Corporation
FNA51560TD3 Rev. 1.0
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FNA51560TD3

Motion SPM 55 module

Fairchild Semiconductor
Fairchild Semiconductor


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