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FJP2145 の電気的特性と機能

FJP2145のメーカーはFairchild Semiconductorです、この部品の機能は「NPN Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 FJP2145
部品説明 NPN Power Transistor
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FJP2145 Datasheet, FJP2145 PDF,ピン配置, 機能
March 2015
FJP2145
ESBCRated NPN Power Transistor
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.21 V
IC Equiv. RCS(ON)(1)
2 A 0.105 Ω
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Wide RBSOA: Up to 1100 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
• High-Voltage, High-Speed Power Switch
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
Description
The FJP2145 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBCconfiguration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1100 volts and up to 5 amps, while providing exception-
ally low on-resistance and very low switching losses.
The ESBCswitch can be driven using off-the-shelf
power supply controllers or drivers. The ESBCMOS-
FET is a low-voltage, low-cost, surface-mount device that
combines low-input capacitance and fast switching. The
ESBCconfiguration further minimizes the required driv-
ing power because it does not have Miller capacitance.
The FJP2145 provides exceptional reliability and a large
operating range due to its square reverse-bias-safe-oper-
ating-area (RBSOA) and rugged design. The device is
avalanche rated and has no parasitic transistors, so is not
prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-220 package.
1 TO-220
1.Base 2.Collector 3.Emitter
Figure 1. Pin Configuration
C2
1
B
E3
Figure 2. Internal Schematic Diagram
C
B FJP2145
FDC655
G
S
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
Marking
Package
FJP2145TU
J2145
TO-220
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
Packing Method
TUBE
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com

1 Page





FJP2145 pdf, ピン配列
Electrical Characteristics(5)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCBO
BVCEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
IC = 1 mA, IE = 0
IC = 5 mA, IB = 0
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
CIB
COB
fT
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
IE = 1 mA, IC = 0
VCB = 800 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.2 A
VCE = 5 V, IC = 1 A
IC = 0.25 A, IB = 0.05 A
IC = 0.5 A, IB = 0.167 A
IC = 1 A, IB = 0.33 A
IC = 1.5 A, IB = 0.3 A
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 0.3 A
IC = 2 A, IB = 0.4 A
VEB = 5 V, IC = 0, f = 1 MHz
VCB = 200 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 0.2 A
Note:
5. Pulse test is pulse width 5 ms, duty cycle 10%.
Min.
1100
800
7
20
8
Typ. Max.
10
10
40
0.049
0.052
0.082
0.151
0.752
0.833
0.855
1.618
11.39
15
2.000
1.500
Unit
V
V
V
μA
μA
V
V
V
V
V
V
V
pF
pF
MHz
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
3
www.fairchildsemi.com


3Pages


FJP2145 電子部品, 半導体
Typical Performance Characteristics (Continued)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I = 0.4 A
C
0.4 I = 1 A
C
0.2
I =2A
C
I =3A
C
0.0
0.01
0.1
1
I [mA], BASE CURRENT
B
Figure 10. Typical Collector Saturation Voltage
150
H =5, 10, T = 25oC, L=166 uH, SRF=684 KHz
FE J
125
tf hfe = 5 Common Emitter
100
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
75
50
25
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I [A], COLLECTOR CURRENT
C
Figure 12. Inductive Load Collector Current
Fall - Time (tf)
180
H =5, 10, T = 25oC, L=166 uH, SRF=684 KHz
FE J
160
140
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
120
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I [A], COLLECTOR CURRENT
C
Figure 14. Inductive Load Collector Voltage
Fall - Time (tf)
1000
100
10
1
1 10 100 1000
COLLECTOR-BASE VOLTAGE[V]
Figure 11. Capacitance
1.6 H = 5, 10, T = 25oC, L=166 uH SRF = 684 KHz, 2I 1=I 2, No peaking
FE J
BB
1.4
1.2
tf hfe = 5 Common Emitter
1.0
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
0.8
0.6
0.4
0.2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I [A], COLLECTOR CURRENT
C
Figure 13. Inductive Load Collector Current
Storage - Time (tstg)
500
H =5, 10, T = 25oC, L=166 uH, SRF=684 KHz
FE J
450
400
350
tf hfe = 5 Common Emitter
300 tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
250 tf hfe = 10 ESBC
200
150
100
50
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I [A], COLLECTOR CURRENT
C
Figure 15. Inductive Load Collector Voltage
Rise - Time (tr)
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FJP2145

NPN Power Transistor

Fairchild Semiconductor
Fairchild Semiconductor


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