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FGH40T70SHD の電気的特性と機能

FGH40T70SHDのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGH40T70SHD
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGH40T70SHD Datasheet, FGH40T70SHD PDF,ピン配置, 機能
FGH40T70SHD
700 V, 40 A Field Stop Trench IGBT
March 2016
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.7 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
EC
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to EmitterVoltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 30 Ω, Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
FGH40T70SHD Rev. 1.0
1
C
G
E
FGH40T70SHD_F155
700
± 20
± 30
80
40
120
120
40
20
120
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com

1 Page





FGH40T70SHD pdf, ピン配列
Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Test Conditions
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
VCE = 400 V, IC = 40 A,
VGE = 15 V
Min.
-
-
-
Typ.
69
13
26
Max
-
-
-
Unit
nC
nC
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 20 A
TC = 25oC
TC = 175oC
Erec Reverse Recovery Energy
TC = 175oC
trr
Diode Reverse Recovery Time
IF =20 A, dIF/dt = 200 A/μs
TC = 25oC
TC = 175oC
Qrr Diode Reverse Recovery Charge
TC = 25oC
TC = 175oC
Min.
-
-
-
-
-
-
-
Typ.
2.0
1.73
54
37
235
65
944
Max
2.5
-
-
-
-
-
-
Unit
V
uJ
ns
nC
©2016 Fairchild Semiconductor Corporation
FGH40T70SHD Rev. 1.0
3
www.fairchildsemi.com


3Pages


FGH40T70SHD 電子部品, 半導体
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
500
100
td(off)
10
1
20
tf
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
40 60
Collector Current, IC [A]
80
Figure 15. Load Current Vs. Frequency
250
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
200 VGE = 15/0V, RG = 6Ω
150 TC = 25oC
TC = 75oC
100
50 TC = 100oC
0
1k 10k 100k
Switching Frequency, f[Hz]
Figure 17. Forward Characteristics
80
1M
TC = 175oC
TC = 25oC
10
1
0
TC = 75oC
TC = 25oC
TC = 75oC
TC = 175oC
1234
Forward Voltage, VF [V]
5
Figure 14. Switching Loss vs.
Collector Current
10000
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
Eon
1000
Eoff
100
20
40 60
Collector Current, IC [A]
80
Figure 16. SOA Characteristics
300
100
10μs
100μs
10 1ms
10 ms
DC
1 *Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 18. Reverse Recovery Current
10
TC = 25oC
8 TC = 175oC ---
di/dt = 200A/μs
6
di/dt = 100A/μs
4 di/dt = 200A/μs
2 di/dt = 100A/μs
0
0 10 20 30 40
Forward Current, IF [A]
©2016 Fairchild Semiconductor Corporation
FGH40T65SHD Rev. 1.0
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FGH40T70SHD

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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